EE-SX1035

Photomicrosensor (Transmissive) EE-SX1035 Be sure to read Precautions on page 25. Dimensions Features Compact model with a 5.2-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. Absolute Maximum Ratings (Ta = 25C) 6.3 Item Symbol Rated value Emitter Forward current I 50 mA F (see note 1) 10.1 10.1 Pulse forward cur- I 1 A 10.1 FP Optical axis rent (see note 2) Reverse voltage V 4 V R Detector CollectorEmitter V 30 V CEO Four, 0.25 Four, 0.5 voltage EmitterCollector V 5 V Cross section AA Cross section BB ECO (2.5) voltage Collector current I 20 mA C Collector dissipa- P 100 mW C tion (see note 1) Ambient tem- Operating Topr 25C to 85C perature Storage Tstg 30C to Internal Circuit 100C Soldering temperature Tsol 260C K C Unless otherwise specified, the (see note 3) tolerances are as shown below. Note: 1. Refer to the temperature rating chart if the ambient temper- A E Dimensions Tolerance ature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 3 mm max. 0.2 100 Hz. Terminal No. Name 3 < mm 6 0.24 3. Complete soldering within 10 seconds. A Anode 6 < mm 10 0.29 K Cathode 10 < mm 18 0.35 C Collector 18 < mm 30 0.42 E Emitter Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wavelength 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK CollectorEmitter saturated volt- V (sat) 0.15 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- 850 nm typ. V = 10 V P CE length Rising time tr 4 s typ. V = 5 V, R = 100 , I = 5 mA CC L L Falling time tf 4 s typ. V = 5 V, R = 100 , I = 5 mA CC L L 32 EE-SX1035 Photomicrosensor (Transmissive) Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25C IF V = 10 V CE Ta = 30C PC Ta = 25C Ta = 70C Ambient temperature Ta (C) Forward voltage V (V) Forward current I (mA) F F Relative Light Current vs. Ambi- Light Current vs. CollectorEmitter Dark Current vs. Ambient ent Temperature Characteristics Voltage Characteristics (Typical) Temperature Characteristics (Typical) (Typical) Ta = 25C V = 10 V I = 20 mA CE F 0 lx V = 5 V CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F CollectorEmitter voltage V (V) CE Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics Response Time vs. Load Resist- Sensing Position Characteristics (Typical) ance Characteristics (Typical) (Typical) 120 V = 5 V CC I = 20 mA F I = 20 mA Ta = 25C F V = 10 V CE V = 10 V CE Ta = 25C 100 Ta = 25C (Center of optical axis) 80 d 60 40 20 0 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 Load resistance R (k) Distance d (mm) L Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1035 Photomicrosensor (Transmissive) 33 Response time tr, tf (s) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) L Relative light current I (%) L Forward current I (mA) F Relative light current I (%) Dark current I (nA) L D Light current I (mA) L (Center of optical axis)