EE-SX1140

Photomicrosensor (Transmissive) EE-SX1140 Deep Slot, Wide-width/Terminal Type (Slot Width: 14 mm) Deep slot type (Light axis height: 13.5 mm) Terminal for PCB mounting Includes screw mounting holes (M3) Be sure to read Safety Precautions on Page 3. RoHS Compliant Ordering Information Photomicrosensor Minimum Sensing Connecting Aperture size Appearance Sensing distance Output type Model packing unit method method (H W) (mm) (Unit: pcs) Both emitting 16.3 Terminal Transmissive side and for PCB Phototransistor EE-SX1140 1 (slot type) detecting side mounting 14 mm (Slot width) 2 1.5 5 23 Note: Order in multiples of minimum packing unit. Ratings, Characteristics and Exterior Specifications Electrical and Optical Characteristics (Ta = 25C) Absolute Maximum Ratings (Ta = 25C) Value Item Symbol Rated value Unit Item Symbol Unit Condition MIN. TYP. MAX. Emitter Emitter 1 Forward current IF 50* mA Forward VF 1.2 1.5 V IF = 30 mA Pulse forward voltage 2 IFP 1* A current Reverse IR 0.01 10 AVR = 4 V Reverse voltage VR 4V current Peak Detector emission P 940 nm IF = 20 mA Collector-Emitter wavelength VCEO 30 V voltage Detector Emitter-Collector VECO V Light IF = 20 mA, voltage IL 0.4 mA current VCE = 10 V Collector current IC 20 mA Dark VCE = 10 V, ID 2 200 nA Collector 1 current 0 lx PC 100* mW dissipation Leakage ILEAK A Operating temperature Topr -25 to 85 C current Storage temperature Tstg -30 to 100 C Collector- Emitter VCE IF = 20 mA, 3 0.1 0.4 V Soldering temperature Tsol 260* C saturated (sat) IL = 0.1 mA voltage *1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. Peak *2. Pulse width 10 s, Repeated 100 Hz spectral P 850 nm VCE = 10 V sensitivity *3. Complete soldering within 10 seconds. wavelength Exterior Specifications VCC = 5 V, Rising time tr 4 s RL = 100 Material IL = 5 mA Connecting method Weight (g) Case VCC = 5 V, Falling time tf 4 s RL = 100 Terminal for PCB 0.7 Polycarbonate IL = 5 mA mounting 1 JAPJJJAPANJJAAAAPPPPAAAAANNNNN EE-SX1140 Engineering Data (Reference Value) Fig 1. Forward Current vs. Collector Fig 2. Forward Current vs. Forward Fig 3. Light Current vs. Forward Dissipation Temperature Rating Voltage Characteristics (Typical) Current Characteristics (Typical) 60 60 10 150 Ta = 25C VCE = 10 V IF 50 50 Ta = 30C 8 PC Ta = 25C 40 100 40 6 Ta = 70C 30 30 4 20 50 20 2 10 10 0 0 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 10 20 30 40 50 -40 -20 0 20406080 100 Forward current IF (mA) Forward voltage VF (V) Ambient temperature Ta (C) Fig 4. Light Current vs. Collector-Emitter Fig 5. Relative Light Current vs. Ambient Fig 6. Dark Current vs. Ambient Voltage Characteristics (Typical) Temperature Characteristics (Typical) Temperature Characteristics (Typical) 120 10,000 10 IF = 20 mA VCE = 10 V Ta = 25C VCE = 5 V 0 lx 9 110 1,000 8 100 7 100 6 10 90 5 1 4 80 3 0.1 70 2 0.01 1 60 0.001 0 -40 -20 0 20 40 60 80 100 0 80 0123456789 10 -30 -20 -10 10 20 30 40 50 60 70 90 Ambient temperature Ta (C) Collector-Emitter voltage VCE (V) Ambient temperature Ta (C) Fig 7. Response Time vs. Load Fig 8. Sensing Position Characteristics Fig 9. Sensing Position Characteristics Resistance Characteristics (Typical) (Typical) (Typical) 10,000 120 120 IF = 20 mA VCC = 5 V Ta = 25C VCE = 10 V IF = 20 mA Ta = 25C VCE = 10 V 100 100 Ta = 25C (Center of optical axis) 1,000 0+ d 80 80 tf d 0 100 60 60 + 40 40 tr 10 20 20 1 0 0 0.01 0.1 1 10 -1.5 -0.75 0 0.75 1.5 2.25 3 -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 Load resistance RL (k) Distance d (mm) Distance d (mm) Fig 10. Response Time Measurement Circuit Input 0 t 90% Output 10% 0 t tr tf IL Input VCC Output RL 2 IF = 10 mA IF = 30 mA IF = 20 mA IF = 40 mA IF = 50 mA Response time tr, tf (s) Forward current IF (mA) Light current IL (mA) Collector dissipation PC (mW) Forward current IF (mA) Relative light current IL (%) Relative light current IL (%) Dark current ID (nA) Light current IL (mA) Relative light current IL (%) (Center of optical axis)