EE-SX1096-W1

Photomicrosensor (Transmissive) EE-SX1096 Be sure to read Precautions on page 25. Dimensions Features General-purpose model with a 3.4-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. Mounts to PCBs or connects to connectors. 250.2 High resolution with a 0.5-mm-wide aperture. Two, R1 190.15 With a horizontal sensing slot. OMRONs XK8-series Connectors can be connected without sol- 50.2 60.2 dering. Contact your OMRON representative for information on obtaining XK8-series Connectors. Two, 3.20.2 dia. holes Four, C0.3 Two, C2 Absolute Maximum Ratings (Ta = 25C) 2.10.15 2.10.15 Item Symbol Rated value 0.50.1 0.50.1 (Optical axis) Emitter Forward current I 50 mA F (see note 1) 100.2 7.20.2 30.4 Pulse forward cur- I 1 A FP 2.50.1 rent (see note 2) Four, 0.5 Four, 0.25 Reverse voltage V 4 V R Detector CollectorEmitter V 30 V CEO Cross section AA voltage Cross section BB EmitterCollector V --- ECO voltage Collector current I 20 mA C Internal Circuit Collector dissipa- P 100 mW C K C Unless otherwise specified, the tion (see note 1) tolerances are as shown below. Ambient tem- Operating Topr 25C to 85C perature Storage Tstg 30C to 100C A E Dimensions Tolerance Soldering temperature Tsol 260C 3 mm max. 0.3 (see note 3) Terminal No. Name 3 < mm 6 0.375 Note: 1. Refer to the temperature rating chart if the ambient temper- A Anode 6 < mm 10 0.45 ature exceeds 25C. K Cathode 2. The pulse width is 10 s maximum with a frequency of 10 < mm 18 0.55 C Collector 100 Hz. E Emitter 18 < mm 30 0.65 3. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wavelength 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 14 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK CollectorEmitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- 850 nm typ. V = 10 V P CE length Rising time tr 4 s typ. V = 5 V, R = 100 , I = 5 mA CC L L Falling time tf 4 s typ. V = 5 V, R = 100 , I = 5 mA CC L L 54 EE-SX1096 Photomicrosensor (Transmissive) Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25C V = 10 V IF CE Ta = 30C PC Ta = 25C Ta = 70C Forward current I (mA) Ambient temperature Ta (C) F Forward voltage V (V) F Light Current vs. CollectorEmitter Relative Light Current vs. Ambi- Dark Current vs. Ambient Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) Ta = 25C I = 20 mA V = 10 V F CE V = 5 V 0 lx CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F CollectorEmitter voltage V (V) CE Ambient temperature Ta (C) Ambient temperature Ta (C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) 120 120 V = 5 V CC I = 20 mA F Ta = 25C I = 20 mA F V = 10 V CE V = 10 V CE Ta = 25C 100 100 Ta = 25C (Center of optical axis) 80 80 d d 60 60 40 40 20 20 0 0 0.5 0.25 0 0.25 0.5 0.75 1.0 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Load resistance R (k) Distance d (mm) L Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1096 Photomicrosensor (Transmissive) 55 Response time tr, tf (s) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L L Forward current I (mA) F (Center of optical axis) Dark current I (nA) D Relative light current I (%) L Light current I (mA) L