Product Information

EE-SX138

EE-SX138 electronic component of Omron

Datasheet
Optical Switches, Transmissive, Phototransistor Output PHOTO MICROSENSOR

Manufacturer: Omron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.658 ea
Line Total: USD 5.66

77 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
97 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 5
Multiples : 5

Stock Image

EE-SX138
Omron

5 : USD 7.8125
50 : USD 5.3
100 : USD 4.825
300 : USD 4.6375
500 : USD 4.4625
1000 : USD 4.4375
2500 : USD 4.425
5000 : USD 4.3875

77 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

EE-SX138
Omron

1 : USD 5.658
10 : USD 5.4395
20 : USD 5.175
50 : USD 4.117
100 : USD 3.8985
200 : USD 3.841
500 : USD 3.818
1000 : USD 3.8065
2000 : USD 3.795

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Output Device
Slot Width
Aperture Width
Collector- Emitter Voltage VCEO Max
Maximum Collector Current
Mounting Style
Maximum Operating Temperature
Minimum Operating Temperature
Series
Sensing Distance
Sensing Method
Wavelength
Brand
Power Dissipation
Fall Time
Rise Time
Factory Pack Quantity :
Height
Output Type
Termination Style
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
Vf - Forward Voltage
Vr - Reverse Voltage
LoadingGif

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Photomicrosensor (Transmissive) EE-SX138 Be sure to read Precautions on page 25. Dimensions Features General-purpose model with a 3.4-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. High resolution with a 0.5-mm-wide aperture. Screw-mounting possible. Four, 0.1 taper Absolute Maximum Ratings (Ta = 25C) 23.8 Item Symbol Rated value Emitter Forward current I 50 mA Part A F (see note 1) 2.1 0.5 Aperture 4.75 0.2 Pulse forward cur- I 1 A Four, R1.25 FP rent (see note 2) (Optical axis) Reverse voltage V 4 V R Detector CollectorEmitter V 30 V CEO Four, 1 R voltage EmitterCollector V --- Four, 0.25 ECO Four, 0.5 voltage 2.540.2 7.60.3 Collector current I 20 mA 13.6 14.3 C Collector dissipa- P 100 mW C tion (see note 1) Ambient tem- Operating Topr 25C to 85C perature Storage Tstg 40C to 100C Internal Circuit Soldering temperature Tsol 260C (see note 3) E A Unless otherwise specified, the Note: 1. Refer to the temperature rating chart if the ambient temper- tolerances are as shown below. ature exceeds 25C. Dimensions Tolerance 2. The pulse width is 10 s maximum with a frequency of C K 100 Hz. 3 mm max. 0.2 3. Complete soldering within 10 seconds. Terminal No. Name 3 < mm 6 0.24 A Anode 6 < mm 10 0.29 K Cathode 10 < mm 18 0.35 C Collector 18 < mm 30 0.42 E Emitter Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wavelength 940 nm typ. I = 20 mA P F Detector Light current I 1.9 mA min., 14 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK CollectorEmitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- 850 nm typ. V = 10 V P CE length Rising time tr 4 s typ. V = 5 V, R = 100 , I = 5 mA CC L L Falling time tf 4 s typ. V = 5 V, R = 100 , I = 5 mA CC L L 90 EE-SX138 Photomicrosensor (Transmissive) Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25C V = 10 V CE IF Ta = 30C PC Ta = 25C Ta = 70C Forward current I (mA) F Forward voltage V (V) Ambient temperature Ta (C) F Light Current vs. CollectorEmitter Relative Light Current vs. Ambi- Dark Current vs. Ambient Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) I = 20 mA Ta = 25C F V = 10 V CE V = 5 V CE 0 lx I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F CollectorEmitter voltage V (V) CE Ambient temperature Ta (C) Ambient temperature Ta (C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) 120 V = 5 V I = 20 mA CC F I = 20 mA F Ta = 25C V = 10 V CE V = 10 V CE Ta = 25C 100 Ta = 25C (Center of optical axis) 80 d 60 40 20 0 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 Load resistance R (k) L Distance d (mm) Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Vcc Output EE-SX138 Photomicrosensor (Transmissive) 91 Response time tr, tf (s) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L L Forward current I (mA) F Dark current I (nA) D Relative light current I (%) Light current I (mA) L L (Center of optical axis)

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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