Product Information

BUK9Y12-55B

BUK9Y12-55B electronic component of NXP

Datasheet
Trans MOSFET N-CH 55V 61.8A Automotive 5-Pin(4+Tab) LFPAK
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

9: USD 4.1265 ea
Line Total: USD 37.14

0 - Global Stock
MOQ: 9  Multiples: 1
Pack Size: 1

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Mounting Style
Packaging
Channel Mode
Id Continuous Drain Current
Pd Power Dissipation
Gate Source Voltage Max
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain Source On Volt
Rad Hardened
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Additional Infomation About Product

BUK9Y12-55B N-channel TrenchMOS logic level FET Rev. 04 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V and 24 V loads General purpose power switching Advanced braking systems (ABS) Motors, lamps and solenoids Automotive systems 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --55 V DS j j voltage I drain current V =5V T =25C --61.8A D GS mb see Figure 1 see Figure 4 P total power T = 25 C see Figure 2 --106W tot mb dissipation Static characteristics R drain-source V =10V I =20A -8.1 11 m DSon GS D on-state T =25C j resistance V =5V I =20A -9.1 12 m GS D T =25C see Figure 12 j see Figure 13BUK9Y12-55B NXP Semiconductors N-channel TrenchMOS logic level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =61.8 A V 55 V --129mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =5V I =20A -13 - nC GD GS D V =44 V T =25C see DS j Figure 14 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source D mb 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y12-55B LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 BUK9Y12-55B All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 7 April 2010 2 of 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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