Product Information

BLF184XRU

BLF184XRU electronic component of NXP

Datasheet
Transistors RF MOSFET BLF184XR/ACC-4L/TUBE-BULK
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 60
1 : USD 129.5322
2 : USD 125.8915
5 : USD 121.0538
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 131.4715
2 : USD 131.4715
5 : USD 131.4715
10 : USD 131.4715
25 : USD 131.4715
50 : USD 131.4715
100 : USD 130.2016
250 : USD 121.3574
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

BLF184XR BLF184XRS Power LDMOS transistor Rev. 4 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1. Application information Test signal f V P G DS L p D (MHz) (V) (W) (dB) (%) pulsed RF 108 50 700 23.9 73.5 CW 108 50 750 23.5 81.9 1.2 Features and benefits Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 600 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Industrial, scientific and medical applications Broadcast transmitter applicationsBLF184XR BLF184XRS Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF184XR (SOT1214A) 1drain1 1 1 2 2drain2 3gate1 5 3 34 4gate2 5 4 1 5source 2 sym117 BLF184XRS (SOT1214B) 1drain1 1 2 1 2drain2 3gate1 3 34 5 4gate2 5 4 1 5source 2 sym117 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF184XR - flanged ceramic package 2 mounting holes 4 leads SOT1214A BLF184XRS - earless flanged ceramic package 4 leads SOT1214B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 135 V DS V gate-source voltage 6+11 V GS T storage temperature 65 +150 C stg 1 T junction temperature - 225 C j 1 Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF calculator. BLF184XR BLF184XRS 4 All information provided in this document is subject to legal disclaimers. Ampleon B.V. 2015. All rights reserved. Product data sheet Rev. 4 1 September 2015 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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