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BFG31,115

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Transistors RF Bipolar PNP 10V 100mA 14GHZ

Manufacturer: NXP

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 - WHS 1 MOQ : 1000 Multiples : 1 BFG31,115 NXP	1000 : USD 0.4739	N/A Obsolete

0 - WHS 2 Multiples : 1000 BFG31,115 NXP		N/A Obsolete

0 - WHS 3 MOQ : 1 Multiples : 1 BFG31,115 NXP	1 : USD 1.0949 10 : USD 0.9286 100 : USD 0.7138 500 : USD 0.6334 1000 : USD 0.499 2000 : USD 0.479 10000 : USD 0.4726 25000 : USD 0.4569 50000 : USD 0.4432	N/A Obsolete

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BFG31 PNP 5 GHz wideband transistor Product specification 1995 Sep 12 Supersedes data of November 1992NXP Semiconductors Product specification PNP 5 GHz wideband transistor BFG31 FEATURES PINNING lfpage High output voltage capability 4 PIN DESCRIPTION High gain bandwidth product 1emitter Good thermal stability 2base Gold metallization ensures 3emitter excellent reliability. 4 collector DESCRIPTION PNP planar epitaxial transistor 123 mounted in a plastic SOT223 MSB002 - 1 Top view envelope. Fig.1 SOT223. It is intended for wideband amplifier applications. NPN complement is the BFG97. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-emitter voltage open base 15 V CEO I DC collector current 100 mA C P total power dissipation up to T = 135 C note 1 1W tot s h DC current gain I = 70 mA V = 10 V 25 FE C CE T =25 C amb f transition frequency I = 70 mA V = 10 V 5.0 GHz T C CE f= 500MHz T = 25 C amb G maximum unilateral power I = 70 mA V = 10 V 12 dB UM C CE gain f= 800MHz T =25 C amb V output voltage I = 100 mA V = 10 V 600 mV o C CE R =75 T = 25 C L amb LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 15 V CEO V emitter-base voltage open collector 3V EBO I DC collector current 100 mA C P total power dissipation up to T =135 C note 1 1W tot s T storage temperature 65 150 C stg T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector tab. s 1995 Sep 12 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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Manufacturer NXP NXP
Product Category RF Bipolar Transistors RF Bipolar Transistors
RoHS - XON Y Y
Transistor Type Bipolar Bipolar
Technology Si Si
Transistor Polarity Pnp Pnp
Operating Frequency 5000 MHz 5000 MHz
Collector- Emitter Voltage VCEO Max 15 V 15 V
Emitter- Base Voltage VEBO 3 V 3 V
Continuous Collector Current 0.1 A 0.1 A
Pd - Power Dissipation 1000 mW 1000 mW
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case SOT - 223 SOT - 223
Packaging Reel Reel
Configuration Single Single
Type Rf Bipolar Small Signal Rf Bipolar Small Signal
Brand Nxp Semiconductors Nxp Semiconductors
Maximum Dc Collector Current 0.1 A 0.1 A
Factory Pack Quantity : 1000 1000
Collector- Base Voltage Vcbo 20 V 20 V
Dc Current Gain Hfe Max 25 25
Height 1.7 mm 1.7 mm
Length 6.7 mm 6.7 mm
Width 3.7 mm 3.7 mm
Cnhts 8541290000 8541290000
Gain Bandwidth Product Ft 5000 Mhz 5000 Mhz
Hts Code 8541290075 8541290075
Mxhts 85412999 85412999
Product Type Rf Bipolar Transistors Rf Bipolar Transistors
Subcategory Transistors Transistors
Taric 8541290000 8541290000