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BFG403W,115

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Transistors RF Bipolar NPN 4.5V 17GHZ

Manufacturer: NXP

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 - WHS 1 MOQ : 3000 Multiples : 3000 BFG403W,115 NXP	3000 : USD 0.0888	N/A Obsolete

0 - WHS 2 MOQ : 1 Multiples : 1 BFG403W,115 NXP	1 : USD 0.4373 10 : USD 0.3299 100 : USD 0.1788 1000 : USD 0.1337 3000 : USD 0.1157 9000 : USD 0.1081 24000 : USD 0.1073 45000 : USD 0.1063 99000 : USD 0.1021	N/A Obsolete

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BFG403W NPN 17 GHz wideband transistor Product specification 1998 Mar 11 Supersedes data of 1997 Oct 29NXP Semiconductors Product specification NPN 17 GHz wideband transistor BFG403W FEATURES PINNING Low current PIN DESCRIPTION Very high power gain 1emitter Low noise figure 2 base High transition frequency 3emitter Very low feedback capacitance. 4 collector APPLICATIONS Pager front ends 3 4 handbook, halfpage RF front end Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) Radar detectors. 21 Top view MSB842 DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin Marking code: P3. dual-emitter SOT343R package. Fig.1 Simplified outline SOT343R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 10 V CBO V collector-emitter voltage open base 4.5 V CEO I collector current (DC) 33.6 mA C P total power dissipation T 140 C 16 mW tot s h DC current gain I =3mA V =2V T =25 C 5080120 FE C CE j C feedback capacitance I =0 V =2 V f = 1MHz 20 fF re C CB f transition frequency I =3mA V = 2 V f = 2 GHz T =25 C 17 GHz T C CE amb G maximum power gain I =3mA V = 2 V f = 2 GHz T =25 C 22 dB max C CE amb F noise figure I =1mA V = 2 V f = 900 MHz = 1 dB C CE S opt CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 1998 Mar 11 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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Manufacturer NXP NXP
Product Category RF Bipolar Transistors RF Bipolar Transistors
RoHS - XON Y Y
Transistor Type Bipolar Bipolar
Technology Si Si
Transistor Polarity Npn Npn
Operating Frequency 17000 MHz 17000 MHz
Collector- Emitter Voltage VCEO Max 4.5 V 4.5 V
Emitter- Base Voltage VEBO 1 V 1 V
Continuous Collector Current 0.003 A 0.003 A
Pd - Power Dissipation 16 mW 16 mW
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case SOT - 343 SOT - 343
Packaging Reel Reel
Configuration Single Single
Type Rf Bipolar Small Signal Rf Bipolar Small Signal
Brand Nxp Semiconductors Nxp Semiconductors
Maximum Dc Collector Current 0.003 A 0.003 A
Factory Pack Quantity : 3000 3000
Collector- Base Voltage Vcbo 10 V 10 V
Dc Current Gain Hfe Max 50 50
Height 1 mm 1 mm
Length 2.2 mm 2.2 mm
Width 1.35 mm 1.35 mm
Cnhts 8541210000 8541210000
Gain Bandwidth Product Ft 17000 Mhz 17000 Mhz
Hts Code 8541210075 8541210075
Mxhts 85412101 85412101
Product Type Rf Bipolar Transistors Rf Bipolar Transistors
Subcategory Transistors Transistors
Taric 8541210000 8541210000