Product Information

PMV120ENEAR

PMV120ENEAR electronic component of Nexperia

Datasheet
MOSFET PMV120ENEA/TO-236AB/REEL 7" Q3
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3692 ea
Line Total: USD 0.37

31152 - Global Stock
Ships to you between
Mon. 20 May to Wed. 22 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
200790 - WHS 1


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 3000
Multiples : 3000

Stock Image

PMV120ENEAR
Nexperia

3000 : USD 0.1125
9000 : USD 0.1102
24000 : USD 0.1102
45000 : USD 0.1102

31152 - WHS 2


Ships to you between Mon. 20 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

PMV120ENEAR
Nexperia

1 : USD 0.3692
10 : USD 0.2749
100 : USD 0.1725
1000 : USD 0.1242
3000 : USD 0.107
9000 : USD 0.107
24000 : USD 0.107
45000 : USD 0.1058

Read More Specifications

     
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RoHS - XON
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Cnhts
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Mxhts
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Additional Infomation About Product

PMV120ENEA 60 V, N-channel Trench MOSFET 4 March 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 60 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 2.1 A D GS amb Static characteristics R drain-source on-state V = 10 V I = 2.1 A T = 25 C - 96 123 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad 2 for drain 6 cm .Nexperia PMV120ENEA 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 D 1 G gate 2 S source 3 D drain G 1 2 TO-236AB (SOT23) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV120ENEA TO-236AB plastic surface-mounted package 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code 1 PMV120ENEA DX% 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - 60 V DS j V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C 1 - 2.1 A D GS amb V = 10 V T = 100 C 1 - 1.3 A GS amb I peak drain current T = 25 C single pulse t 10 s - 8.3 A DM amb p E non-repetitive drain-source T = 25 C I = 0.3 A DUT in - 9 mJ DS(AL)S j(init) D avalanche energy avalanche (unclamped) P total power dissipation T = 25 C 2 - 513 mW tot amb PMV120ENEA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 4 March 2016 2 / 16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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