Product Information

TPC6113(TE85L,F,M)

TPC6113(TE85L,F,M) electronic component of Toshiba

Datasheet
MOSFET N-Ch -20V FET 690pF -5A 2.2W
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9052 ea
Line Total: USD 0.91

8727 - Global Stock
Ships to you between
Fri. 24 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
21 - WHS 1


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 0.736
10 : USD 0.6394
100 : USD 0.4772
500 : USD 0.3749
1000 : USD 0.2898
3000 : USD 0.2645
9000 : USD 0.23
24000 : USD 0.2173
45000 : USD 0.2128

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Additional Infomation About Product

TPC6113 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC6113 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: R = 38 m (typ.) DS (ON) ( V = 4.5V) GS Low leakage current: I = 10 A (max) (V = 20 V) DSS DS Enhancement mode: V = 0.5 to 1.2 V th (V = 10 V, I = 0.2 mA) DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 20 V DSS Drain-gate voltage (R = 20 k) V 20 V GS DGR Gate-source voltage V 12 V GSS DC (Note 1) I 5 D Drain current A Pulse (Note 1) I 20 DP JEDEC Drain power dissipation (t = 5 s) P 2.2 W D (Note 2a) JEITA Drain power dissipation (t = 5 s) P 0.7 W D (Note 2b) TOSHIBA 2-3T1A Single pulse avalanche energy (Note 3) E 1.6 mJ AS Weight: 0.011 g (typ.) Avalanche current I 2.5 A AR Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Circuit Configuration 6 45 Characteristics Symbol MaxUnit Thermal resistance, channel to ambient (t = 5 s) R 56.8 C/W th (ch-a) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) R 178.5 C/W th (ch-a) (Note 2b) 1 2 3 Note: (Note 1), (Note 2), (Note 3) : See other pages. This transistor is an electrostatic-sensitive device. Please handle with caution. Start of commercial production 2009-11 1 2013-11-01 TPC6113 Marking (Note 4) Lot No. Lot code (month) Part No. S3N (or abbreviation code) Product-specific code Pin 1 Lot code Note 5 (year) Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s) (b) Device mounted on a glass-epoxy board (b) (t = 5 s) FR-4 FR-4 25.4 25.4 0.8 25.4 25.4 0.8 (Unit: mm) (Unit: mm) (a) (b) Note 3: V = 16 V, T = 25C (initial), L =0.2 mH, R = 25 , I = 2.5 A DD ch G AR Note 4: on lower left of the marking indicates Pin 1. Note 5: A line under a Lot No. identifies the indication of product Labels. Not underlined: Pb /INCLUDES > MCV Underlined: G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2013-11-01

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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