Product Information

XR46000ESETR

XR46000ESETR electronic component of MaxLinear

Datasheet
MOSFET 600V N-Channel Power MOSFET
Manufacturer: MaxLinear
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - Warehouse 1

MOQ : 1
Multiples : 1

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XR46000ESETR
MaxLinear

1 : USD 1.4826
10 : USD 1.227
30 : USD 1.0395
100 : USD 0.8862
500 : USD 0.8594
1000 : USD 0.8448
N/A

Obsolete
0 - Warehouse 2

MOQ : 1
Multiples : 1

Stock Image

XR46000ESETR
MaxLinear

1 : USD 1.6311
10 : USD 0.776
100 : USD 0.4215
N/A

Obsolete

Read More Specifications

     
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Product Category
RoHS - XON
Icon ROHS
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Package / Case
Technology
Series
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Subcategory
Cnhts
Hts Code
Mxhts
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Additional Infomation About Product

XR46000 N-Channel Power MOSFET Description FEATURES The XR46000 is a silicon N-channel enhanced power MOSFET. Fast switching With low conduction loss, good switching performance and high ESD improved capability Low gate charge (Typ. 7.5nC) avalanche energy, it is suitable for various power supply system, Low reverse transfer capacitance especially for AC step driving application for LED lighting. (Typ. 5.0pF) The package type is SOT-223, which comply with the RoHS standard. APPLICATIONS LED lighting applications Downlight Key Parameters High bay Specialty V 600V DSS Architectural I 1.5A D P (T = 25C) 20W D C R 7.0 DS,ON,typ Equivalent Circuit Pin Configuration Drain Drain 1 2 3 Gate Drain Source Gate SOT-223, Top View Source Figure 1. Equivalent Cirucit REV1B 1/6XR46000 Absolute Maximum Ratings Operating Conditions Stresses beyond the limits listed below may cause T operating junction temperature ............................. 150C J permanent damage to the device. Exposure to any Absolute T operating ambient temperature ................ -40C to 85C A Maximum Rating condition for extended periods may affect device reliability and lifetime. T = 25C unless otherwise noted. C V drain-to-source voltage ......................................600V DSS I continuous drain current (T = 25C) .......................1.5A D C I continuous drain current (T = 100C) ...................0.85A D C I pulsed drain current ..................................................6A DM V gate-to-source voltage .........................................30V GS P power dissipation (T = 25C) ................................20W D C P derating factor above 25C .............................0.16W/C D T storage temperature range ......... -65C to 150C STORAGE E single pulse avalanche energy .............................80mJ AS NOTE: Unless otherwise noted, all tests are pulsed tests at the specified temperature, therefore: T = T = T . J C A REV1B 2/6

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Maxlinear may also be referenced as

Exar
Exar Corporation
MAX LINEAR
MAXLINEAR
MaxLinear, Inc.
XR

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