Product Information

PMV160UP

PMV160UP electronic component of Nexperia

Datasheet
MOSFET, P-CHANNEL, -20V, -1.2A, SOT-23-3

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.656 ea
Line Total: USD 3.28

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 5
Multiples : 1

Stock Image

PMV160UP
Nexperia

5 : USD 0.4082
50 : USD 0.2848
100 : USD 0.1757
500 : USD 0.1366
1500 : USD 0.134

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
LoadingGif

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PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V R rated Trench MOSFET technology DSon Very fast switching 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T=25C ---20 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =-4.5V T 25 C ---1.2 A D GS amb Static characteristics R drain-source on-state V =-4.5V I =-1.2A T = 25 C - 170 210 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 3 2S source 3 D drain G 12 S SOT23 (TO-236AB) 017aaa257 SOT23PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV160UP TO-236AB plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code PMV160UP NH% 1 % = placeholder for manufacturing site code PMV160UP All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 6 December 2011 2 of 16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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