PMV20XN Nexperia

PMV20XN 30 V, 4.8 A N-channel Trench MOSFET Rev. 1 5 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fast switching 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T=25C --30 V DS j voltage V gate-source -12 - 12 V GS voltage 1 I drain current V =4.5 V T =25C --4.8 A D GS amb Static characteristics drain-source V =4.5 V I =4.8 A - 1925m R DSon GS D on-state T =25C j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . SOT23PMV20XN NXP Semiconductors 30 V, 4.8 A N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 3 D 2S source 3 D drain G 12 mbb076 S SOT23 (TO-236AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV20XN TO-236AB plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code PMV20XN KW% 1 % = placeholder for manufacturing site code PMV20XN All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 5 April 2011 2 of 16