Product Information

PMCPB5530X

PMCPB5530X electronic component of Nexperia

Datasheet
MOSFET, N/P-CH, 20V, DFN2020
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.4911 ea
Line Total: USD 2.46

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 5
Multiples : 1

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PMCPB5530X
Nexperia

5 : USD 0.4768
10 : USD 0.4024
100 : USD 0.3061
500 : USD 0.2589
1000 : USD 0.2193

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
LoadingGif

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Additional Infomation About Product

PMCPB5530X 20 V, complementary Trench MOSFET Rev. 1 26 June 2012 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Trench MOSFET technology Exposed drain pad for excellent thermal conduction 1.3 Applications Charging switch for portable devices Power management in battery-driven portables DC-to-DC converters Hard disc and computing power Small brushless DC motor drive management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1 (N-channel), Static characteristics R drain-source on-state V =4.5 V I =3A T = 25 C - 26 34 m DSon GS D j resistance TR2 (P-channel), Static characteristics drain-source on-state V =-4.5V I =-3.4A T = 25 C - 55 70 m R DSon GS D j resistance TR1 (N-channel) V drain-source voltage T=25C --20 V DS j V gate-source voltage -12 - 12 V GS 1 I drain current V =4.5 V T =25C t 5 s --5.3 A D GS amb DFN2020-6PMCPB5530X NXP Semiconductors 20 V, complementary Trench MOSFET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit TR2 (P-channel) V drain-source voltage T=25C ---20 V DS j V gate-source voltage -12 - 12 V GS 1 I drain current V =-4.5V T =25C t 5 s ---4.5 A D GS amb 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm . 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 D1 D2 6 54 2 G1 gate TR1 3D2 drain TR2 78 4S2 source TR2 5 G2 gate TR2 123 6D1 drain TR1 G1 S1 S2 G2 017aaa261 Transparent top view 7D1 drain TR1 DFN2020-6 (SOT1118) 8D2 drain TR2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMCPB5530X DFN2020-6 plastic thermal enhanced ultra thin small outline package SOT1118 no leads 6 terminals 4. Marking Table 4. Marking codes Type number Marking code PMCPB5530X 1W 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit TR1 (N-channel) V drain-source voltage T =25C - 20 V DS j V gate-source voltage -12 12 V GS PMCPB5530X All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 26 June 2012 2 of 18

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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