Product Information

PMCXB1000UEZ

PMCXB1000UEZ electronic component of Nexperia

Datasheet
MOSFET PMCXB1000UE/DFN1010B-6/REEL 7
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6765 ea
Line Total: USD 0.68

5999 - Global Stock
Ships to you between
Mon. 20 May to Wed. 22 May
MOQ: 1  Multiples: 1
Pack Size: 1

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7677 - WHS 1


Ships to you between Mon. 20 May to Wed. 22 May

MOQ : 1
Multiples : 1

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PMCXB1000UEZ
Nexperia

1 : USD 0.4474
10 : USD 0.3507
100 : USD 0.1978
1000 : USD 0.1322
5000 : USD 0.1138
10000 : USD 0.1127

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Additional Infomation About Product

PMCXB1000UE 30 V, complementary N/P-channel Trench MOSFET 27 June 2016 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very low threshold voltage for portable applications: V = 0.7 V GS(th) Leadless ultra small and ultra thin SMD plastic package: 1.1 1.0 0.37 mm ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Relay driver High-speed line driver Level shifter Power management in battery-driven portables 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1 (N-channel), Static characteristics R drain-source on-state V = 4.5 V I = 590 mA T = 25 C - 550 670 m DSon GS D j resistance TR2 (P-channel), Static characteristics R drain-source on-state V = -4.5 V I = -410 mA T = 25 C - 1.2 1.4 DSon GS D j resistance TR1 (N-channel) V drain-source voltage T = 25 C - - 30 V DS j I drain current V = 4.5 V T = 25 C 1 - - 590 mA D GS amb TR2 (P-channel) V drain-source voltage T = 25 C - - -30 V DS j I drain current V = -4.5 V T = 25 C 1 - - -410 mA D GS amb 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .Nexperia PMCXB1000UE 30 V, complementary N/P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S1 source TR1 D1 D2 1 6 2 G1 gate TR1 7 3 D2 drain TR2 G1 G2 2 5 4 S2 source TR2 8 3 4 5 G2 gate TR2 S1 S2 6 D1 drain TR1 017aaa262 Transparent top view 7 D1 drain TR1 DFN1010B-6 (SOT1216) 8 D2 drain TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMCXB1000UE DFN1010B-6 DFN1010B-6: plastic thermal enhanced ultra thin small outline SOT1216 package no leads 6 terminals 7. Marking Table 4. Marking codes Type number Marking code PMCXB1000UE B 101 READING DIRECTION MARKING CODE MARK-FREE AREA (EXAMPLE) PIN 1 INDICATION MARK READING EXAMPLE: YEAR DATE CODE A 110 aaa-019766 VENDOR CODE Fig. 1. DFN1010B-6 (SOT1216) binary marking code description PMCXB1000UE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 27 June 2016 2 / 20

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Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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