Product Information

PMCM650CUNEZ

PMCM650CUNEZ electronic component of Nexperia

Datasheet
MOSFET MOS Discretes WLCSP
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5218 ea
Line Total: USD 0.52

4335 - Global Stock
Ships to you between
Tue. 14 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
4335 - WHS 1


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

PMCM650CUNEZ
Nexperia

1 : USD 0.44
10 : USD 0.3601
25 : USD 0.3565
50 : USD 0.3159
100 : USD 0.2549
250 : USD 0.2497
500 : USD 0.2497
1000 : USD 0.2497

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

PMCM650CUNE 20 V, Common Drain N-channel Trench MOSFET Rev. 1.0 8 November 2017 Product data sheet 1 Product profile 1.1 General description N-channel enhancement mode common-drain dual Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 1.2 Features and benefits Common-drain type for bi-directional current flow Low threshold voltage Ultra small package: 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 1.3 Applications Loadswitch Battery Protection Battery Management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V source-source voltage T = 25 C - - 20 V SS j V gate-source voltage -8 - 8 V GS 1 I source current T = 25 C V = 4.5 V t 5 s - - 5.3 A S amb GS Static characteristics R source-source on-state V = 4.5 V I = 3 A T = 25 C - 40 52 m SSon GS S j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm . WLCSP6Nexperia PMCM650CUNE 20 V, Common Drain N-channel Trench MOSFET 2 Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1 2 S1 S2 A1 G1 gate 1 A2 S1 source 1 A B1 S2 source 2 B B2 S1 source 1 C C1 S2 source 2 G1 G2 aaa-027241 Transparent top view C2 G2 gate 2 3 Ordering information Table 3. Ordering information Type number Package Name Description Version PMCM650CUNE WLCSP6 wafer level chip-size package 6 bumps (3 x 2) WLCSP6 3-2 4 Marking Table 4. Marking codes Type number Marking code PMCM650CUNE AH PMCM650CUNE v.1 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved. Product data sheet Rev. 1.0 8 November 2017 2 / 18

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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