Product Information

MEM2309SG

MEM2309SG electronic component of Micro One

Datasheet
MOSFET P Trench 30V 6A 2V @ 250uA 65 mΩ @ 6A,10V SOP-8 RoHS

Manufacturer: Micro One
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1714 ea
Line Total: USD 0.86

0 - Global Stock
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
0 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 5
Multiples : 5

Stock Image

MEM2309SG
Micro One

5 : USD 0.1387
50 : USD 0.1145
150 : USD 0.1023
500 : USD 0.0903
3000 : USD 0.083
6000 : USD 0.0793

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The MEM2309SG is a MOSFET P Trench 30V 6A 2V @ 250uA 65 mΩ @ 6A,10V SOP-8 RoHS manufactured by Micro One. It has a low on-resistance, high current capability, and fast switching speed that helps to maximize performance. It offers a wide variety of features including built-in ESD protection, low RDS(on), and an integrated Schottky diode to reduce losses during switching. This device is RoHS compliant and is packaged in a 8-pin surface mount SOP package for easy mounting. It has a breakdown voltage of 30V and a maximum drain current rating of 6A at a drain-to-source voltage of 2V. The gate-to-source threshold voltage is rated at 250uA and the maximum avalanche energy is 6A@10V.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
MICRONE(Nanjing Micro One Elec)
Nanjing Micro One Elec

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