Product Information

MEM2310M3G

MEM2310M3G electronic component of Micro One

Datasheet
MOSFET N Channel 30V 5.8A 1.4V @ 250uA 30mO @ 5.8A,10V SOT23-3 RoHS

Manufacturer: Micro One
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0816 ea
Line Total: USD 0.82

8439 - Global Stock
Ships to you between
Fri. 10 May to Wed. 15 May
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
17857 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 10
Multiples : 10

Stock Image

MEM2310M3G
Micro One

10 : USD 0.0503
100 : USD 0.0403
300 : USD 0.0351
3000 : USD 0.0313
6000 : USD 0.0284
9000 : USD 0.0268

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The MEM2310M3G from Micro One is a MOSFET transistor that can be used for various applications. It is a N-channel enhancement mode device, rated at a drain-source voltage of 30 volts and a maximum current of 5.8 amperes. The gate-source voltage is 1.4 volts at a gate current of 250uA. The on-state resistance of the device is 30 milliohms and has a gate-source threshold voltage of 10 volts. It is housed in a RoHS compliant SOT23-3 package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
MICRONE(Nanjing Micro One Elec)
Nanjing Micro One Elec

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