Product Information

MEM2303M3G

MEM2303M3G electronic component of Micro One

Datasheet
MOSFET P Channel 30V 4.2A 1.3V @ 250uA 58mO @ 4.2A,10V SOT23-3 RoHS
Manufacturer: Micro One
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0592 ea
Line Total: USD 0.59

2861 - Global Stock
Ships to you between
Fri. 10 May to Wed. 15 May
MOQ: 10  Multiples: 10
Pack Size: 10

 More Buying Options & Price Grid(s)

Availability Price Quantity
2861 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 10
Multiples : 10

Stock Image

MEM2303M3G
Micro One

10 : USD 0.0595
100 : USD 0.0483
300 : USD 0.0427
3000 : USD 0.0371
6000 : USD 0.0338
9000 : USD 0.032

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

TechnologyThe MEM2303M3G is an P Channel MOSFET with a 30V drain-gate voltage, 4.2A continuous current, and 1.3V drain-gate threshold voltage. It is rated at a maximum of 250uA gate-source leakage current, 58mO on-resistance at 4.2A, and 10V drain-avalanche voltage. It is housed in a SOT23-3 package that is compliant with RoHS standards and is manufactured by Micro One Technology.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Micro One may also be referenced as

MICRONE(Nanjing Micro One Elec)
Nanjing Micro One Elec

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