Product Information

1N65G-AA3-R

1N65G-AA3-R electronic component of Unisonic

Datasheet
MOSFET N Channel 650V 1.2A(Tc) 4V @ 250uA 12.5O @ 600mA,10V SOT-223 RoHS

Manufacturer: Unisonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1578 ea
Line Total: USD 0.79

7275 - Global Stock
Ships to you between
Wed. 22 May to Mon. 27 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
6969 - WHS 1


Ships to you between
Wed. 22 May to Mon. 27 May

MOQ : 5
Multiples : 5

Stock Image

1N65G-AA3-R
Unisonic

5 : USD 0.1336
50 : USD 0.107
150 : USD 0.0938
500 : USD 0.0839
2500 : USD 0.0759
5000 : USD 0.0718

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The 1N65G-AA3-R is an N-channel MOSFET created by Unisonic. It is electrical parameters make it suitable for high voltage, low current loads. Its breakdown voltage is rated at 650V, capable of handling 1.2 amperes temperature at 25 degrees Celsius (Tc) The gate-source voltage is rated at 4V and a gate-source current of 250uA. The on-state resistance is rated at 12.5 Ohms with a maximum drain source current of 600 milliamperes. The package for this device is a small outline transistor (SOT-223) and it is compliant with the RoHS directive for hazardous substances.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Unisonic Tech
UTC(Unisonic Tech)

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