Product Information

25N10L-TN3-R

25N10L-TN3-R electronic component of Unisonic

Datasheet
MOSFET N Trench 100V 23A (Tc) 4V @ 250uA 80 mΩ @ 16A,10V TO-252 RoHS

Manufacturer: Unisonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4702 ea
Line Total: USD 0.47

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

25N10L-TN3-R
Unisonic

1 : USD 0.4702
10 : USD 0.3895
30 : USD 0.3309
100 : USD 0.2826
500 : USD 0.2743
1000 : USD 0.2701

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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TechnologiesThe 25N10L-TN3-R is a TO-252 RoHS manufactured by Unisonic Technologies MOSFET N Trench 100V 23A (Tc) 4V @ 250uA 80 mO @ 16A, 10V. This product is a P-Channel enhancement mode field effect transistor. It is designed to be used in gate drive circuits, power drivers, and high current switch applications. It has a MOSFET N Trench structure with 100V drain-source voltage, 23A drain-source current and 4V gate-source threshold voltage. It also features an impressive 80 mO on-resistance @ 16A, 10V and a slightly less impressive 250uA gate charge. All of these specs make this an ideal component for high current switching and other power related circuits.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Unisonic Tech
UTC(Unisonic Tech)

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