ZVN3306FTA

SOT23 N-CHANNEL ENHANCEMENT ZVN3306F MODE VERTICAL DMOS FET ISSUE 3 JANUARY 1996 FEATURES *R =5 DS(on) S * 60 Volt V DS D COMPLEMENTARY TYPE - ZVP3306F G PARTMARKING DETAIL - MC SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V 60 V DS Continuous Drain Current at T =25C I 150 mA amb D Pulsed Drain Current I 3A DM Gate-Source Voltage V 20 V GS Power Dissipation at T =25C P 330 mW amb tot Operating and Storage Temperature Range T :T -55 to +150 C j stg ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source BV 60 V I =1mA, V =0V DSS D GS Breakdown Voltage Gate-Source Threshold V 0.8 2.4 V I =1mA, V =V GS(th) D DS GS Voltage Gate-Body Leakage I 20 nA V = 20V, V =0V GSS GS DS Zero Gate Voltage I 0.5 A V =60V, V =0V DSS DS GS Drain Current 50 V =48V, V =0V, T=125C(2) A DS GS On-State Drain Current(1) I 750 mA V =18V, V =10V D(on) DS GS Static Drain-Source On-State R 5 V =10V, I =500mA DS(on) GS D Resistance (1) Forward Transconductance g 150 mS V =18V, I =500mA fs DS D (1)(2) Input Capacitance (2) C 35 pF iss Common Source C 25 pF V =18V, V =0V, f=1MHz oss DS GS Output Capacitance (2) Reverse Transfer Capacitance C 8pF rss (2) Turn-On Delay Time (2)(3) t 3typ 5 ns d(on) Rise Time (2)(3) t 4typ 7 ns r V 18V, I =500mA DD D Turn-Off Delay Time (2)(3) t 4typ 6 ns d(off) Fall Time (2)(3) t 5typ 8 ns f (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 3 - 393Gate Threshold Voltage VGS(th) ZVN3306F TYPICAL CHARACTERISTICS VGS=10V 9V 1.0 10 8V 0.8 8 7V 0.6 6 6V ID= 1A 0.4 5V 4 4V 0.2 2 0.5A 3V 0.25A 0 0 02 4 6 8 10 02 4 6 8 10 VDS - Drain Source Voltage (Volts) VGS -Gate Source Voltage (Volts) Saturation Characteristics Voltage Saturation Characteristics 1.0 10 VDS=10V 0.8 5 0.6 ID= 1A 0.5A 0.4 0.25A 0.2 1 0 11020 02 4 6 8 10 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Transfer Characteristics On-resistance vs gate-source voltage 2.4 200 2.2 ID=-0.5A 180 2.0 160 1.8 140 1.6 120 VDS=18V 1.4 100 1.2 80 60 1.0 40 0.8 20 0.6 0 0.4 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 ID(on) - Drain Current (Amps) T-Temperature (C) Transconductance v drain current Normalised RDS(on) and VGS(th) vs Temperature 3 - 394 rce R ) Drain-Sou esistance RDS(on RDS(ON) -Drain Source Resistance () VDS-Drain Source Voltage (Volts) DS(on) Normalised R and VGS(th) ID(On) -On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) gfs-Forward Transconductance (mS)