Product Information

BTA440Z-800BTQ

BTA440Z-800BTQ electronic component of WeEn Semiconductor

Datasheet
Triac; 800V; 40A; 50mA; THT; high temperature, sensitive gate; tube
Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.151 ea
Line Total: USD 3.15

1718 - Global Stock
Ships to you between
Wed. 22 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1718 - WHS 1


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

BTA440Z-800BTQ
WeEn Semiconductor

1 : USD 3.151
10 : USD 2.9095
25 : USD 2.553
100 : USD 2.231
250 : USD 2.2195
450 : USD 2.024
900 : USD 1.679
2700 : USD 1.6445

99 - WHS 2


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

BTA440Z-800BTQ
WeEn Semiconductor

1 : USD 3.497
5 : USD 3.133
7 : USD 2.522
18 : USD 2.379
450 : USD 2.327

Read More Specifications

     
Manufacturer
Product Category
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Mounting Style
Hts Code
LoadingGif

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Additional Infomation About Product

BTA440Z-800BT 3Q Hi-Com Triac Rev.02 - 28 May 2019 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a IITO3P package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. Thisseries B triac will commutate the full RMS current at the maximum rated junction temperature (T = j(max) 150 C) without the aid of a snubber. It is used in applications wherehigh junction operating temperature capabilit is required. 2. Features and benefits High current TRIAC 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt High junction operating temperature capability (T = 150 C) j(max) High voltage capability Least sensitive gate for highest noise immunity Low thermal resistance Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only Insulated tab rated at 2500Vrms 3. Applications Applications subject to high temperature (T = 150 C) j(max) High current / high surge applications High power / industrial controls - e.g. heating, motors, lighting 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off-state - - 800 V DRM voltage I RMS on-state current full sine wave T 110 C - - 40 A T(RMS) mb Fig. 1 Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C t = 20 ms - - 400 A TSM j(init) p state current Fig. 4 Fig. 5 full sine wave T = 25 C t = 16.7 ms - - 440 A j(init) p T junction temperature - - 150 C j Static characteristicsWeEn Semiconductors BTA440Z-800BT 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit I gate trigger current V = 12 V I = 0.1 A T2+ G+ - - 50 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- - - 50 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- - - 50 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 80 mA H D j V on-state voltage I = 56.6 A T = 25 C Fig. 10 - - 1.5 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 150 C (V = 67% 1000 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 150 C I = 20 A 15 - - A/ms COM D j T(RMS) commutating current dV /dt = 20 V/s (snubberless com condition) gate open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 T2 T1 2 T2 main terminal 2 G sym051 3 G gate mb n.c. mounting base isolated 1 2 3 IITO3P (SOT1292) 6. Ordering information Table 3. Ordering information Type number Package Orderable part number Packing Small packing Package Package Name method quantity version issue date BTA440Z-800BT IITO3P BTA440Z-800BTQ Tube 30 SOT1292 21-July-2017 7. Marking Table 4. Marking codes Type number Marking code BTA440Z-800BT BTA440Z-800BT BTA440Z-800BT All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2019. All rights reserved Product data sheet 28 May 2019 2 / 13

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

Ween Semiconductor may also be referenced as

WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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