Product Information

BUJ302AX,127

BUJ302AX,127 electronic component of WeEn Semiconductor

Datasheet
Bipolar Transistors - BJT NPN 400 V 4 A
Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.4025 ea
Line Total: USD 1.4

814 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2004 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

BUJ302AX,127
WeEn Semiconductor

1 : USD 0.8061
10 : USD 0.7015
100 : USD 0.4922
500 : USD 0.4232
1000 : USD 0.3691
2000 : USD 0.3323
5000 : USD 0.3232
10000 : USD 0.3013
25000 : USD 0.3002

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Maximum Operating Temperature
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
Category
Brand Category
LoadingGif

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Additional Infomation About Product

BUJ302AX NPN power transistor 9 October 2018 Product data sheet 1. General description High voltage, high speed planar passivated NPN power switching transistor in a SOT186A (TO-220F)full pac plastic package. 2. Features and benefits Fast switching Isolated package Low thermal resistance Very high voltage capability Very low switching and conduction losses 3. Applications DC-to-DC converters High frequency electronic lighting ballasts Inverters Motor control systems 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I peak collector current Fig. 1 Fig. 2 Fig. 3 - - 8 A CM P total power dissipation T 25 C Fig. 4 - - 26 W tot h V collector-emitter peak V = 0 V - - 1050 V CESM BE voltage Static characteristics h DC current gain I = 0.1 A V = 5 V T = 25 C 48 66 100 FE C CE h Fig. 11 I = 0.8 A V = 3 V T = 25 C 25 42 50 C CE h Fig. 12WeEn Semiconductors BUJ302AX NPN power transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C mb 2 C collector B 3 E emitter E mb n.c. isolated sym123 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUJ302AX TO-220F plastic single-ended package isolated heatsink mounted 1 SOT186A mounting hole 3-lead TO-220full pac BUJ302AX All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 9 October 2018 2 / 12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Ween Semiconductor may also be referenced as

WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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