Product Information

BUJ100,412

BUJ100,412 electronic component of WeEn Semiconductor

Datasheet
Bipolar Transistors - BJT Trans GP BJT NPN 400V 1A 3-Pin SPT
Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6349 ea
Line Total: USD 0.63

3464 - Global Stock
Ships to you between
Wed. 22 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2347 - WHS 1


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

BUJ100,412
WeEn Semiconductor

1 : USD 0.5405
10 : USD 0.4324
100 : USD 0.2944
1000 : USD 0.1714
5000 : USD 0.1449
10000 : USD 0.1242
25000 : USD 0.1219
50000 : USD 0.1196
100000 : USD 0.1138

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Maximum Operating Temperature
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BUJ100 Silicon Diffused Power Transistor Product specification September 2018WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ100 GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for use in compact fluorescent lamps and low power electronic lighting ballasts, converters and inverters, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V Collector-emitter voltage peak value V = 0 V - 700 V CESM BE V Collector-Base voltage (open emitter) - 700 V CBO V Collector-emitter voltage (open base) - 400 V CEO I Collector current (DC) - 1.0 A C I Collector current peak value - 2.0 A CM P Total power dissipation T 25 C - 2 W tot lead V Collector-emitter saturation voltage I = 0.75 A I = 150mA 0.24 1.0 V CEsat C B h I = 0.75 A V = 5 V 14 20 FE C CE t Fall time (Inductive) I = 1.0 A I = 200mA 50 70 ns fi C BON PINNING - TO92 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 2 1 Emitter 3 2 Collector 1 3 Base 32 1 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V Collector to emitter voltage V = 0 V - 700 V CESM BE V Collector to emitter voltage (open base) - 400 V CEO V Collector to base voltage (open emitter) - 700 V CBO I Collector current (DC) - 1.0 A C I Collector current peak value - 2.0 A CM I Base current (DC) - 0.5 A B I Base current peak value - 1.0 A BM P Total power dissipation T 25 C - 2 W tot lead T Storage temperature -65 150 C stg T Junction temperature - 150 C j THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R Thermal resistance - 60 K/W th j-lead junction to lead R Thermal resistance pcb mounted lead length = 4mm 150 - K/W th j-a Junction to ambient September 2018 1 Rev 1.100

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Ween Semiconductor may also be referenced as

WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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