Product Information

BTA316X-800B,127

BTA316X-800B,127 electronic component of WeEn Semiconductor

Datasheet
Triacs RAIL-THYR AND TRIACS
Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9538 ea
Line Total: USD 0.95

965 - Global Stock
Ships to you between
Wed. 15 May to Tue. 21 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between
Wed. 22 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

BTA316X-800B,127
WeEn Semiconductor

1 : USD 3.0553
10 : USD 2.5319
30 : USD 2.152
100 : USD 1.838
500 : USD 1.7844
1000 : USD 1.7577

0 - WHS 2


Ships to you between Tue. 21 May to Thu. 23 May

MOQ : 6000
Multiples : 6000

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BTA316X-800B,127
WeEn Semiconductor

6000 : USD 0.5688

0 - WHS 3


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 1
Multiples : 1

Stock Image

BTA316X-800B,127
WeEn Semiconductor

1 : USD 0.923
3 : USD 0.8359
10 : USD 0.7384
26 : USD 0.6422
70 : USD 0.6071

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Package / Case
Mounting Style
Off-State Leakage Current Vdrm Idrm
Product
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Taric
Category
Brand Category
LoadingGif

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Additional Infomation About Product

BTA316X-800B0 3Q Hi-Com Triac 12 September 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F)full pac plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. Thisseries B0 triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Features and benefits 3Q technology for improved noise immunity High immunity to false turn-on by dV/dt High minimum I for guaranteed immunity to gate noise GT High voltage capability Isolated mounting base package Least sensitive gate for highest noise immunity Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only Very high commutation capability with maximum false trigger immunity 3. Applications Electronic thermostats High power motor controls - e.g. washing machines and vacuum cleaners Rectifier-fed DC inductive loads e.g. DC motors and solenoids Refrigeration and air conditioning compressors 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 800 V DRM state voltage I RMS on-state current full sine wave T 45 C Fig. 1 - - 16 A T(RMS) h Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 140 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 150 A j(init) t = 16.7 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ 10 - 50 mA GT D T T = 25 C Fig. 7 jWeEn Semiconductors BTA316X-800B0 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2+ G- 10 - 50 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- 10 - 50 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 60 mA H D j V on-state voltage I = 18 A T = 25 C Fig. 10 - 1.3 1.5 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 125 C (V = 67% 2500 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 125 C I = 16 A 20 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s (snubberless com condition) gate open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb n.c. mounting base isolated 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA316X-800B0 TO-220F plastic single-ended package isolated heatsink mounted 1 SOT186A mounting hole 3-lead TO-220full pac BTA316X-800B0 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 12 September 2018 2 / 13

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

Ween Semiconductor may also be referenced as

WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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