Product Information

BT139-600-0Q

BT139-600-0Q electronic component of WeEn Semiconductor

Datasheet
Triacs BT139-600-0/SIL3P/STANDARD MAR

Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2986 ea
Line Total: USD 1.3

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 6000
Multiples : 6000

Stock Image

BT139-600-0Q
WeEn Semiconductor

6000 : USD 0.4466
10000 : USD 0.4443
25000 : USD 0.4431

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Mounting Style
Off-State Leakage Current Vdrm Idrm
Product
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
LoadingGif

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BT139-600 4Q Triac 26 September 2018 Product data sheet 1. General description Planar passivated four quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. 2. Features and benefits High blocking voltage capability Planar passivated for voltage ruggedness and reliability Less sensitive gate for high noise immunity Triggering in all four quadrants 3. Applications General purpose motor controls General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I RMS on-state current full sine wave T 99 C Fig. 1 - - 16 A T(RMS) mb Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 155 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 170 A j(init) t = 16.7 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ - 5 35 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- - 8 35 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- - 10 35 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G+ - 22 70 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - 6 45 mA H D jWeEn Semiconductors BT139-600 4Q Triac Symbol Parameter Conditions Min Typ Max Unit V on-state voltage I = 20 A T = 25 C Fig. 10 - 1.2 1.6 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V T = 125 C (V = 67% 200 250 - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dV /dt rate of change of V = 400 V T = 95 C dI /dt = 7.2 A/ 10 20 - V/s com D j com commutating voltage ms I = 16 A gate open circuit T 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb T2 mounting base main terminal 2 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT139-600 TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB BT139-600 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 26 September 2018 2 / 13

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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