Product Information

BT139B-600E,118

BT139B-600E,118 electronic component of WeEn Semiconductor

Datasheet
Triacs TAPE13 TRIAC
Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5808 ea
Line Total: USD 0.58

22508 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1

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22508 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

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BT139B-600E,118
WeEn Semiconductor

1 : USD 0.5808
10 : USD 0.541
100 : USD 0.5277
800 : USD 0.4637
24800 : USD 0.4637

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Additional Infomation About Product

BT139B-600E 4Q Triac 13 August 2018 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT78 (T0-220AB) plastic package intended for use in general purpose bidirectional switching and phase control applications. This sensitive gateseries triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits Direct triggering from low power drivers and logic ICs High blocking voltage capability Planar passivated for voltage ruggedness and reliability Sensitive gate Surface-mountable package Triggering in all four quadrants 3. Applications General purpose phase control General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I RMS on-state current full sine wave T 99 C Fig. 1 - - 16 A T(RMS) mb Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 155 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 170 A j(init) t = 16.7 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ - 2.5 10 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- - 4 10 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- - 5 10 mA D T T = 25 C Fig. 7 jWeEn Semiconductors BT139B-600E 4Q Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2- G+ - 11 25 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - 4 45 mA H D j V on-state voltage I = 20 A T = 25 C Fig. 10 - 1.2 1.6 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V T = 125 C (V = 67% - 50 - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 T1 main terminal 1 T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb T2 mounting base main 2 terminal 2 1 3 D2PAK (SOT404) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT139B-600E D2PAK plastic single-ended surface-mounted package (D2PAK) 3 SOT404 leads (one lead cropped) 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak off-state - 600 V DRM voltage I RMS on-state current full sine wave T 99 C Fig. 1 Fig. 2 - 16 A T(RMS) mb Fig. 3 I non-repetitive peak on- full sine wave T = 25 C t = 20 ms - 155 A TSM j(init) p state current Fig. 4 Fig. 5 full sine wave T = 25 C t = 16.7 ms - 170 A j(init) p 2 2 I t I t for fusing t = 10 ms SIN - 120 As p BT139B-600E All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 13 August 2018 2 / 12

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Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

Ween Semiconductor may also be referenced as

WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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