Product Information

BTA316X-800C,127

BTA316X-800C,127 electronic component of WeEn Semiconductor

Datasheet
Triacs RAIL-THYR AND TRIACS

Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

6000: USD 0.502 ea
Line Total: USD 3012

0 - Global Stock
MOQ: 6000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 6000
Multiples : 1

Stock Image

BTA316X-800C,127
WeEn Semiconductor

6000 : USD 0.5949
10000 : USD 0.5696

0 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 6000
Multiples : 1

Stock Image

BTA316X-800C,127
WeEn Semiconductor

6000 : USD 0.5949
10000 : USD 0.5696

0 - WHS 3


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

BTA316X-800C,127
WeEn Semiconductor

1 : USD 1.5362
10 : USD 1.2758
30 : USD 1.0883
100 : USD 0.9349
500 : USD 0.9081
1000 : USD 0.896

0 - WHS 4


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

BTA316X-800C,127
WeEn Semiconductor

1 : USD 1.0367
3 : USD 0.8372
10 : USD 0.7531
29 : USD 0.5427
79 : USD 0.5157

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Package / Case
Mounting Style
Current Rating
Off-State Leakage Current Vdrm Idrm
Product
Type
Brand
Maximum Gate Peak Inverse Voltage
Product Type
Factory Pack Quantity :
Subcategory
Brand Category
LoadingGif

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IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where the previous NXP references remain, please use the new links as shown below. WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses nxp.com use salesaddresses ween-semi.com For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) NXP Semiconductors N.V. year . All rights reserved becomes WeEn Semiconductors Co., Ltd. year . All rights reserved If you have any questions related to this document, please contact our nearest sales office via e- mail or phone (details via salesaddresses ween-semi.com). Thank you for your cooperation and understanding, WeEn SemiconductorsBTA316X-800C 3Q Hi-Com Triac 19 June 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT186Afull pac plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. Thisseries triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Features and benefits 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt High voltage capability Isolated mounting base package Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only 3. Applications Electronic thermostats High power motor controls e.g. washing machines and vacuum cleaners Rectifier-fed DC inductive loads e.g. DC motors and solenoids Refrigeration and air conditioning compressors 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 800 V DRM state voltage I non-repetitive peak on- full sine wave T = 25 C - - 140 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p I RMS on-state current full sine wave T 45 C Fig. 1 Fig. 2 - - 16 A T(RMS) h Fig. 3 Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ 2 - 35 mA GT D T T = 25 C Fig. 7 j Scan or click this QR code to view the latest information for this product TO-220F

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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