Product Information

TSSS2600

TSSS2600 electronic component of Vishay

Datasheet
Infrared Emitters - High Power 950nm, TH-SL 2.6mW/sr, +/-25deg.
Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4761 ea
Line Total: USD 0.48

5670 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
4229 - WHS 1


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

TSSS2600
Vishay

1 : USD 0.5578
10 : USD 0.4431
30 : USD 0.3948
100 : USD 0.3324
500 : USD 0.3062
1000 : USD 0.29

5670 - WHS 2


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

TSSS2600
Vishay

1 : USD 0.4761
10 : USD 0.3461
100 : USD 0.2657
1000 : USD 0.2185
5000 : USD 0.2047
10000 : USD 0.2036
25000 : USD 0.2036
50000 : USD 0.2036
100000 : USD 0.1932

4697 - WHS 3


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

TSSS2600
Vishay

1 : USD 1.157
5 : USD 0.5876
25 : USD 0.3783
60 : USD 0.2717
164 : USD 0.2574

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Wavelength
Radiant Intensity
If - Forward Current
Vf - Forward Voltage
Power Rating
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Height
Illumination Color
Length
Width
Brand
Lens Shape
Viewing Angle
Cnhts
Hts Code
Lens Dimensions
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Vr - Reverse Voltage
LoadingGif

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Additional Infomation About Product

TSSS2600 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES Package type: leaded Package form: side view Dimensions (L x W x H in mm): 3.6 x 2.2 x 5 Peak wavelength: = 950 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 25, horizontal 94 8672 Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Package matched with detector TEST2600 DESCRIPTION Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TSSS2600 is an infrared, 950 nm emitting diode in GaAs Note technology, molded in a miniature, clear plastic package ** Please see document Vishay Material Category Policy: with side view lens. www.vishay.com/doc 99902 APPLICATIONS Infrared source in miniature light barriers or reflective sensor systems with short transmission distances and low forward voltage requirements. Matching with silicon PIN photodiodes or phototransistors (e.g. TEST2600) PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) tr (ns) e p TSSS2600 2.6 25 950 800 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSSS2600 Bulk MOQ: 5000 pcs, 5000 pcs/bulk Side view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 2.0 A p FSM Power dissipation P 170 mW V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 5 s, 2 mm from case T 260 C sd Thermal resistance junction/ambient Leads not soldered R 450 K/W thJA Rev. 1.7, 24-Aug-11 Document Number: 81042 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TSSS2600 www.vishay.com Vishay Semiconductors 250 125 200 100 75 150 R thJA R thJA 100 50 50 25 0 0 0 20 40 60 80 100 0 20 40 60 80 100 94 8029 T - Ambient Temperature (C) 94 7916 T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 1 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.25 1.6 V F p F Forward voltage I = 1.5 A, t = 100 s V 2.2 V F p F Temperature coefficient of V I = 100 mA TK - 1.3 mV/K F F VF Reverse current V = 5 V I 100 A R R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 30 pF R j I = 100 mA, t = 20 ms I 12.6 3 mW/sr F p e Radiant intensity I = 1.5 A, t = 100 s I 25 mW/sr F p e Radiant power I = 100 mA, t = 20 ms 20 mW F p e Temperature coefficient of I = 100 mA TK - 0.8 %/K e F e horizontal 25 deg 1 Angle of half intensity vertical 60 deg 2 Peak wavelength I = 100 mA 950 nm F p Spectral bandwidth I = 100 mA 50 nm F Temperature coefficient of I = 100 mA TK 0.2 nm/K p F p I = 100 mA t 800 ns F r Rise time I = 1.5 A t 400 ns F r I = 100 mA t 800 ns F f Fall time I = 1.5 A t 400 ns F f Virtual source diameter d2 mm Rev. 1.7, 24-Aug-11 Document Number: 81042 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F

HS Compliance

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:

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