TSTA7100

TSTA7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES Package type: leaded Package form: TO-18 Dimensions (in mm): 4.7 Peak wavelength: = 875 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 5 94 8483 Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Lead (Pb)-free component in accordance with DESCRIPTION RoHS 2002/95/EC and WEEE 2002/96/EC TSTA7100 is an infrared, 875 nm emitting diode in GaAlAs technology in a hermetically sealed TO-18 package with APPLICATIONS lens. Radiation source near infrared range PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e P r TSTA7100 50 5 875 600 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSTA7100 Bulk MOQ: 1000 pcs, 1000 pcs/bulk TO-18 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t 100 s I 200 mA p p FM Surge forward current t 100 s I 2.5 A p FSM P 180 mW V Power dissipation T 25 C P 500 mW case V Junction temperature T 100 C j Storage temperature range T - 55 to + 100 C stg Thermal resistance junction/ambient leads not soldered R 450 K/W thJA Thermal resistance junction/case leads not soldered R 150 K/W thJC Note T = 25 C, unless otherwise specified amb www.vishay.com For technical questions, contact: emittertechsupport vishay.com Document Number: 81044 248 Rev. 1.7, 04-Sep-08TSTA7100 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 875 nm, GaAlAs 600 125 R thJC 500 100 R thJC 400 75 300 50 200 R thJA R thJA 25 100 0 0 0 25 50 75 100 125 0 20 40 60 80 100 12790 T - Ambient Temperature (C) 94 7971 T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 100 mA, t 20 ms V 1.4 1.8 V F p F Breakdown voltage I = 100 A V5V R (BR) Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 20 pF R j Radiant intensity I = 100 mA, t 20 ms I 20 50 100 mW/sr F p e Radiant power I = 100 mA, t 20 ms 10 mW F p e Temperature coefficient of I = 100 mA TK - 0.7 %/K e F e Angle of half intensity 5 deg Peak wavelength I = 100 mA 875 nm F p Spectral bandwidth I = 100 mA 80 nm F I = 100 mA t 600 ns F r Rise time I = 1.5 A, t /T = 0.01, t 10 s t 300 ns F p p r Virtual source diameter d 1.5 mm Note T = 25 C, unless otherwise specified amb BASIC CHARACTERISTICS T = 25 C, unless otherwise specified amb 4 1 10 10 t = 100 s p I = 2.5 A (single pause) FSM t /T= 0.001 p 3 10 t /T=0.01 p 0 10 0.05 0.1 2 10 0.2 0.5 -1 1 10 10 0 1 2 3 4 -2 -1 0 1 2 10 10 10 10 10 94 8003 t - Pulse Duration (ms) V - Forward Voltage (V) p 94 8005 F Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 4 - Forward Current vs. Forward Voltage Document Number: 81044 For technical questions, contact: emittertechsupport vishay.com www.vishay.com Rev. 1.7, 04-Sep-08 249 P - Power Dissipation (mW) I - Forward Current (A) V F I - Forward Current (mA) I - Forward Current (mA) F F