Product Information

SI2304BDS-T1-GE3

SI2304BDS-T1-GE3 electronic component of Vishay

Datasheet
MOSFET 30V 3.2A 1.08W 70mohm @ 10V
Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1591 ea
Line Total: USD 477.3

5820 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 More Buying Options & Price Grid(s)

Availability Price Quantity
5820 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.1591

489 - WHS 2


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 5
Multiples : 5
5 : USD 0.2658
50 : USD 0.23
150 : USD 0.2148
500 : USD 0.1956
3000 : USD 0.1871
6000 : USD 0.182

415000 - WHS 3


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 0.529
10 : USD 0.406
100 : USD 0.2438
500 : USD 0.23

2910 - WHS 4


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.4864

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Category
Brand Category
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Additional Infomation About Product

SI2304BDS-T1-GE3 is a power MOSFET manufactured by Vishay. It is an N-channel enhancement mode transister optimized for high speed switching applications. It has an integrated body diode with dual ESD (electro-static discharge) protection. It has a RDS(on) of 70 mO @ 10V, V(Drain-Source) of 30V, an Id of 3.2A and a Ptot of 1.08W. It is packaged in a 3-pin SOT-23 plastic package with a Low profile body which ensures good thermal stability. This device provides high power density and excellent gate charge characteristics in a small package, making it well-suited for a variety of design applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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