Product Information

SI1869DH-T1-GE3

SI1869DH-T1-GE3 electronic component of Vishay

Datasheet
MOSFET LOAD SWITCH 1.8V RA W/ LEVEL SHIFT

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5347 ea
Line Total: USD 0.53

75331 - Global Stock
Ships to you between
Fri. 24 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1144 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 0.3992
10 : USD 0.3952
25 : USD 0.35
100 : USD 0.2501
250 : USD 0.2452
500 : USD 0.2452
1000 : USD 0.2452

5820 - WHS 2


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.2603

75331 - WHS 3


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 0.5347
10 : USD 0.4566
100 : USD 0.3393
500 : USD 0.2967
1000 : USD 0.2473
3000 : USD 0.2243
6000 : USD 0.2243
9000 : USD 0.2208
24000 : USD 0.2173

2910 - WHS 4


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.2809

1144 - WHS 5


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 31
Multiples : 1
31 : USD 0.35
100 : USD 0.2501
250 : USD 0.2452

     
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Continuous Drain Current
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Si1869DH www.vishay.com Vishay Siliconix Load Switch with Level-Shift FEATURES SOT-363 SC-70 (6 leads) TrenchFET power MOSFETs: 1.8 V rated S 2 ESD protected: 2000 V on input switch, V 4 ON/OFF ON/OFF 165 m low R 5 DS(on) R1, C1 6 1.8 to 20 V input 1.5 to 8 V logic level control Available Low profile, small footprint SC-70-6 package 3 D 2 Adjustable slew-rate 2 D 2 Material categorization: for definitions of compliance 1 please see www.vishay.com/doc 99912 R2 Top View Marking code: VC APPLICATIONS Si1869DH 4 2, 3 D2 Level shift for S2 PRODUCT SUMMARY Q2 portable devices V (V) -20 D2S2 6 R max. ( ) at V = 4.5 V 0.165 R1, DS(on) GS C1 R max. ( ) at V = 2.5 V 0.222 DS(on) GS 5 R max. ( ) at V = 1.8 V 0.303 DS(on) GS ON/OFF Q1 Configuration Single 1 R2 ORDERING INFORMATION Package SOT-363 Lead (Pb)-free Si1869DH-T1-E3 Lead (Pb)-free and halogen-free Si1869DH-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMITUNIT Drain-source voltage (D2-S2) V -20 DS Input voltage V 20 V IN ON/OFF voltage V 8 ON/OFF a, b Continuous 1.2 Load current I L b, c Pulsed 3 A a Continuous intrinsic diode conduction I -0.4 S a Maximum power dissipation P 1W D Operating junction and storage temperature range T , T -55 to +150 C J stg ESD rating, MIL-STD-883D human body model (100 pF, 1500 )ESD 2 kV THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT a Maximum junction-to-ambient (continuous current) R 100 125 thJA C/W Maximum junction-to-foot (Q2) R 44 55 thJF Notes a. Surface mounted on FR4 board b. V = 20 V, V = 8 V, T = 25 C IN ON/OFF A c. Pulse test: pulse width 300 s, duty cycle 2 % S18-0276-Rev. D, 12-Mar-18 Document Number: 73449 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Si1869DH www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT OFF Characteristics Reverse leakage current I V = 8 V, V = 0 V - - 1 A FL IN ON/OFF Diode forward voltage V I = -0.4 A 0.4 0.6 1.1 V SD S ON Characteristics a Input voltage range V 1.8 - 20 IN V Drain to source breakdown voltage V V = 0 V, I = -250 A -20 - - DS GS D (p-channel) V = 1.5 V, V = 4.5 V, I = 1.2 A - 0.132 0.165 ON/OFF IN D On-resistance (p-channel) at 1 A R V = 1.5 V, V = 2.5 V, I = 1 A - 0.177 0.222 DS(on) ON/OFF IN D V = 1.5 V, V = 1.8 V, I = 0.7 A - 0.242 0.303 ON/OFF IN D V 0.2 V, V = 5 V, V = 1.5 V 1 - - IN-OUT IN ON/OFF On-state (p-channel) drain-current I A D(on) V 0.3 V, V = 3 V, V = 1.5 V 1 - - IN-OUT IN ON/OFF Note a. V = < 12 V, V = 8 V, T = 25 C recommended application specifications IN ON/OFF A Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. APPLICATION CIRCUITS 40 Si1869DH t f 35 2, 3 4 I = 1 A L V OUT 30 V IN V = 3 V ON/OFF Q2 C = 10 F i R1 C1 25 C = 1 F o 6 6 20 t 15 d(off) 5 ON/OFF 10 LOAD C o Q1 5 t r t d(on) C 0 i 1 02 4 6 8 10 R2 (k) R2 Note: For R2 switching variations with other V /R1 IN GND R2 combinations see Typical Characteristics Switching Variation R2 at V = 2.5 V, R1 = 20 k IN The Si1869DH is ideally suited for high-side load switching COMPONENTS in portable applications. The integrated n-channel level-shift a R1 Pull-Up Resistor Typical 10 k to 1 M device saves space by reducing external components. The a R2 Optional Slew-Rate Control Typical 0 to 100 k slew rate is set externally so that rise-times can be tailored C1 Optional Slew-Rate Control Typical 1000 pF to different load types. Note a. Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on S18-0276-Rev. D, 12-Mar-18 Document Number: 73449 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Time (s)

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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