Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.052 at V = - 4.5 V 3.5 GS TrenchFET Power MOSFETs: 1.8 V Rated - 8 0.071 at V = - 2.5 V 3 GS 0.108 at V = - 1.8 V 2 GS T O-236 (SOT -23) G 1 3 D S 2 T op V i e w Si2305DS (A5)* * Marking Code Ordering Information: Si2305DS-T1 Si2305DS-T1-E3 (Lead (Pb)-free) Si2305DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage - 8 DS V V Gate-Source Voltage 8 GS T = 25 C 3.5 A Continuous Drain Current (T = 150 C) I J D T = 70 C 2.8 A A I Pulsed Drain Current 12 DM a, b I - 1.6 Continuous Source Current (Diode Conduction) S T = 25 C 1.25 A a, b P W Maximum Power Dissipation D T = 70 C 0.8 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 100 a R C/W Maximum Junction-to-Ambient thJA Steady State 130 Notes: a. Surface Mounted on FR4 board. b. t 5 s. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 70833 www.vishay.com S09-0133-Rev. E, 02-Feb-09 1Si2305DS Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Limits Parameter Symbol Test Conditions Unit Min. Typ. Max. Static V V = 0 V, I = - 10 A Drain-Source Breakdown Voltage - 8 (BR)DSS GS D V V V = V , I = - 250 A Gate-Threshold Voltage - 0.45 - 0.8 GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = - 8 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 8 V, V = 0 V, T = 55 C - 10 DS GS J V - 5 V, V = - 4.5 V - 6 DS GS a I A On-State Drain Current D(on) V - 5 V, V = - 2.5 V - 3 DS GS V = - 4.5 V, I = - 3.5 A 0.044 0.052 GS D a R V = - 2.5 V, I = - 3 A 0.060 0.071 Drain-Source On-Resistance DS(on) GS D V = - 1.8 V, I = - 2 A 0.087 0.108 GS D a g V = - 5 V, I = - 3.5 A 8.5 S Forward Transconductance fs DS D V I = - 1.6 A, V = 0 V Diode Forward Voltage - 1.2 V SD S GS b Dynamic Q Total Gate Charge 10 15 g Q V = - 4 V, V = - 4.5 V, I - 3.5 A Gate-Source Charge 2 nC gs DS GS D Q Gate-Drain Charge 2 gd C Input Capacitance 1245 iss Output Capacitance C V = - 4 V, V = 0 V, f = 1 MHz 375 pF oss DS GS C Reverse Transfer Capacitance 210 rss b Switching t 13 20 d(on) Turn-On Time t V = - 4 V, R = 4 25 40 r DD L ns I - 1.0 A, V = - 4.5 V, R = 6 t 55 80 D GEN G d(off) Turn-Off Time t 19 35 f Notes: a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW 300 s, duty cycle 2 %. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 70833 2 S09-0133-Rev. E, 02-Feb-09