TPC6111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPC6111 Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON resistance: R = 33 m (typ.) DS (ON) Low leakage current: I = 10 A (max) (V = 20 V) DSS DS Enhancement mode: V = 0.3 to 1.0 V th (V = 10 V, I = 1mA) DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 20 V DSS Drain-gate voltage (R = 20 k) V 20 V GS DGR Gate-source voltage V 8 V GSS I 5.5 DC (Note 1) D Drain current A Pulse (Note 1) I 22 DP Drain power dissipation (t = 5 s) 2.2 W P D (Note 2a) Drain power dissipation (t = 5 s) JEDEC P 0.7 W D (Note 2b) JEITA 5.1 mJ Single pulse avalanche energy (Note 3) E AS TOSHIBA 2-3T1A Avalanche current I 2.8 A AR Weight: 0.011 g (typ.) Repetitive avalanche energy (Note 4) E 0.019 mJ AR Channel temperature T 150 C ch 55~150 Storage temperature range T C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Circuit Configuration 6 45 Characteristics Symbol MaxUnit Thermal resistance, channel to ambient (t = 5 s) R 56.8 C/W th (ch-a) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) R 178.5 C/W th (ch-a) (Note 2b) 1 2 3 Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See other pages. This transistor is an electrostatic-sensitive device. Please handle with caution. Start of commercial production 2009-04 1 2013-11-01 TPC6111 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Drain cut-off current I V = 20 V, V = 0 V 10 A DSS DS GS V I = 10 mA, V = 0 V 20 (BR) DSS D GS Drain-source breakdown voltage V V I = 10 mA, V = 8 V 12 (BR) DSX D GS Gate threshold voltage V V = 10 V, I = 1mA 0.3 1.0 V th DS D R V = 1.5 V, I = 1.4 A 76 150 DS (ON) GS D R V = 1.8 V, I = 1.4 A 56 80 DS (ON) GS D Drain-source ON resistance m R V = 2.5 V, I = 2.8 A 44 57 DS (ON) GS D R V = 4.5 V, I = 2.8 A 33 40 DS (ON) GS D Forward transfer admittance Y V = 10 V, I = 2.8 A 7 14 S fs DS D Input capacitance C iss 700 V = 10 V, V = 0 V, f = 1 MHz pF Reverse transfer capacitance C rss DS GS 100 Output capacitance C 140 oss Rise time t 7 r I = 2.8 A 0 V D V GS V OUT 5 V Turn-on time t 12 on Switching time ns Fall time t f 30 V 10 V DD Turn-off time t 95 off Duty 1%, t = 10 s w Total gate charge Q g 10 (gate-source plus gate-drain) V 16 V, V = 5 V, DD GS nC Gate-source charge 1 Q I = 5.5 A gs 1 D 1.2 Gate-drain (miller) charge Q gd 2.5 Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Drain reverse Pulse (Note 1) I 22 A DRP current Forward voltage (diode) V I = 5.5 A, V = 0 V 1.2 V DSF DR GS 2 2013-11-01 4.7 R = 3.6 L