Product Information

TLP3914(TP15,F)

TLP3914(TP15,F) electronic component of Toshiba

Datasheet
Toshiba Photodiode Output Optocouplers Photovoltaic BVS=1.5kV

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 3.0618 ea
Line Total: USD 153.09

0 - Global Stock
MOQ: 50  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1500
Multiples : 1500
1500 : USD 2.0325
3000 : USD 1.98

0 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 50
Multiples : 1
50 : USD 3.0618
200 : USD 2.6303
500 : USD 2.3861

0 - WHS 3


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 6.1479
10 : USD 3.7152
25 : USD 3.0888
100 : USD 2.7432
250 : USD 2.5164
1500 : USD 1.9872

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Package / Case
Maximum Operating Temperature
Minimum Operating Temperature
Series
Packaging
Output Type
Number of Channels
Isolation Voltage
If - Forward Current
Vf - Forward Voltage
Vr - Reverse Voltage
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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TLP3914 TOSHIBA PHOTOCOUPLER IRED & PHOTODIODE ARRAY TLP3914 Unit: mm TELECOMMUNICATION PROGRAMMABLE CONTROLLERS MOSFET GATE DRIVER 4.2 1.4 The TOSHIBA SSOP coupler TLP3914 is a small outline coupler, suitable for 3.65 1.9 surface mount assembly. The TLP3914 consists of an infrared emitting diode, optically coupled to a series connected photo diode array which is suitable for MOSFET gate drive. (0.3) 0.2 3.8 0.2 1.27 2.04 Features (0.46) 4 pin SSOP (SSOP4) : 1.8 mm high, 1.27 mm pitch Open Voltage : 7 V (min) There is a detail drawing in P6. Short Current : 20 A (min) Isolation Voltage : 1500 Vrms (min) TOSHIBA 11-2B1 UL-recognized : UL 1577, File No.E67349 Weight: 0.03 g (typ.) Pin Configuration (top view) 1 4 1. ANODE 2. CATHODE 3. CATHODE 4. ANODE 2 3 Start of commercial production 2004-06 2017 - 2019 1 2019-06-24 Toshiba Electronic Devices & Storage Corporation 1.8 0.15 TLP3914 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward Current I 30 mA F Forward Current I / C -0.3 mA / C F Derating (Ta 25C) Reverse Voltage V 5 V R LED P 50 mW Diode power dissipation D Diode power dissipation derating (Ta 25C) P /C -0.5 mW/C D Junction Temperature T 125 C j Forward Current I 50 A FD Reverse Voltage V 10 V RD DETECTOR Output power dissipation P 0.5 mW O Junction Temperature T 125 C j Storage Temperature Range T -55 to 125 C stg Operating Temperature Range T -40 to 85 C opr Lead Soldering Temperature (10 s) T 260 C sol Isolation Voltage (AC, 60 s, R.H. 60 %) (Note 1) BV 1500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two terminal device: Pins 1 and 2 shorted together and pins 3 and 4 shorted together. Caution This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and equipment are earthed. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Forward Current I 7 20 mA F Operating Temperature T -25 65 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Electrical Characteristics (Ta = 25C) Max Unit Characteristic Symbol Test Condition Min Typ. Forward Voltage V I = 10 mA 1.15 1.30 1.45 V F F LED Reverse Current I V = 5 V 10 A R R Capacitance C V = 0 V, f = 1 MHz 30 pF T Forward Voltage V I = 10 A 9.6 V FD FD Reverse Current I V = 10 V 1 nA RD RD DETECTOR Capacitance C V = 0 V, f = 1 MHz 2.5 pF TD (Anode to Cathode) 2017 - 2019 2 2019-06-24 Toshiba Electronic Devices & Storage Corporation

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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