Product Information

TLP4026G(F)

TLP4026G(F) electronic component of Toshiba

Datasheet
Toshiba MOSFET Output Optocouplers Photorelay Voff=350V Ion=0.12A

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.6563 ea
Line Total: USD 1.66

1 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

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TLP4026G(F)
Toshiba

1 : USD 1.6563

170 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 19
Multiples : 1

Stock Image

TLP4026G(F)
Toshiba

19 : USD 4.8144
25 : USD 4.7181

194 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 19
Multiples : 1

Stock Image

TLP4026G(F)
Toshiba

19 : USD 4.8144
25 : USD 4.7181

1027 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 23
Multiples : 1

Stock Image

TLP4026G(F)
Toshiba

23 : USD 4.5736
50 : USD 2.353
100 : USD 2.206
200 : USD 2.1419
800 : USD 2.0366

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Isolation Voltage
Series
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Output Type
Number of Channels
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
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TLP4026G TOSHIBA Photocoupler Photorelay TLP4026G Telecommunication Unit: mm Measuring Equipment Security Equipment FA The Toshiba TLP4026G consists of an infrared emitting diode optically coupled to a photo-MOSFET and is the 1-form-A/B photorelay with 350-V withstanding voltage. Normally closed (1-form-B) device, normally opened (1-form-A) device Peak off-state voltage: 350 V (min) Trigger LED current: 3 mA (max) On-state current: 120 mA (max) On-state resistance: 25 (max) Isolation voltage: 1500 Vrms (min) UL-recognized: UL 1577, File No.E67349 Pin Configuration (top view) JEDEC JEITA TOSHIBA 11-10H1 1 8 Weight: 0.2 g (typ.) 2 7 1: Anode (1b) 2: Cathode (1b) 3 6 3: Anode (1a) 4: Cathode (1a) 5: Drain D1 (1a) 6: Drain D2 (1a) 4 5 7: Drain D3 (1b) 8: Drain D4 (1b) Start of commercial production 2002-08 2019 1 2019-06-24 Toshiba Electronic Devices & Storage Corporation TLP4026G Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Forward current I 50 mA F Forward current derating (Ta 25C) I /C 0.5 mA/C F Peak forward current I 1 A FP Reverse voltage V 5 V R P 50 mW Diode power dissipation D Diode power dissipation derating (Ta 25C) P / C -0.5 mW/C D Junction temperature T 125 C j Off-state output terminal voltage V 350 V OFF One channel operation On-state current I 120 mA ON Two channel operations (1a1b simultaneous operation) One channel operation On-state current derating ION/C 1.2 mA/C Two channel operations (Ta 25C) (1a1b simultaneous operation) Output power dissipation P 370 mW O Output power dissipation derating (Ta 25C) P / C 3.7 mW / C O Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Operating temperature range T 40 to 85 C opr Lead soldering temperature (10 s) T 260 C sol Isolation voltage (AC, 60 s, R.H. 60 %) (Note 1) BV 1500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7 and 8 are shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage V 280 V DD Forward current I 5 25 mA F On-state current I 120 mA ON Operating temperature T 20 65 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2019 2 2019-06-24 Toshiba Electronic Devices & Storage Corporation Detector LED

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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