Product Information

TLP3121(F)

TLP3121(F) electronic component of Toshiba

Datasheet
Toshiba MOSFET Output Optocouplers Photorelay Voff=80V Ion=0.35A Ron=1Ohm

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 1.2839 ea
Line Total: USD 128.39

194 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
194 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 100
Multiples : 100

Stock Image

TLP3121(F)
Toshiba

100 : USD 1.2839

291 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 14
Multiples : 1

Stock Image

TLP3121(F)
Toshiba

14 : USD 6.6455
25 : USD 6.444
50 : USD 6.3151

     
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RoHS - XON
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Cnhts
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TLP3121 TOSHIBA Photocoupler PHOTORELAY TLP3121 Measurement Instruments Logic Testers / Memory Testers Unit: mm Board Testers / Scanners The TOSHIBA TLP3121 Mini-flat photorelay is a small-outline photorelay, suitable for surface-mount assembly. The TLP3121 consists of an infrared- emitting diode optically coupled to a photo-MOS FET and housed in a 4-pin package. Features 4 pin SOP (2.54SOP4) : 2.1 mm high, 2.54 mm pitch 1-Form-A Peak off-state voltage : 80 V (min) JEDEC Trigger LED current : 4 mA (max) JEITA ON-State current : 350 mA (max) TOSHIBA 11 5H1 ON-state resistance : 1.2 (max) Weight: 0.1 g (typ.) OFF-state capacitance : 40 pF (max) Isolation voltage : 1500 Vrms (min) UL-recognized : UL 1577, File No.E67349 cUL-recognized : CSA Component Acceptance Service No.5A File No.E67349 VDE-approved : EN 60747-5-5 (Note 1) Note 1: When a VDE approved type is needed, please designate the Option(V4). Pin configuration (top view) 1 4 2 3 1 : Anode 2 : Cathode 3 : Drain 4 : Drain Start of commercial production 2000-12 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP3121 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current I 50 mA F Forward current derating (Ta 25C) I /C -0.5 mA/C F Reverse voltage V 5 V R Diode power dissipation P 50 mW D Diode power dissipation derating (Ta 25C) P /C -0.5 mW/C D Junction temperature T 125 C j OFF-state output terminal voltage V 80 V OFF ON-state current I 350 mA ON ON-state current derating (Ta 25C) I /C -3.5 mA/C ON Output power dissipation P 147 mW O Output power dissipation derating (Ta 25C) P / C -1.47 mW / C O Junction temperature T 125 C j Storage temperature range T -40 to 125 C stg Operating temperature range T -20 to 85 C opr Lead soldering temperature (10 s) T 260 C sol Isolation voltage (AC, 60 s, R.H. 60 %) (Note 1) BV 1500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two-terminal device : LED side pins shorted together, and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage V 64 V DD Forward current I 5 30 mA F On-state current I 350 mA ON Operating temperature T 25 60 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 10 mA 1.0 1.15 1.3 V F F Reverse current I V = 5 V 10 A R R Capacitance between terminals C V = 0 V, f = 1 MHz 15 pF T F Off-state current I V = 30 V, Ta = 50 C 200 1000 pA OFF OFF Capacitance between terminals C V = 0 V, f = 100 MHz 30 40 pF OFF 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation Detector LED Detector LED

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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