Product Information

TLP191B(TPR,U,C,F)

TLP191B(TPR,U,C,F) electronic component of Toshiba

Datasheet
Photodiode Output Optocouplers 7Voc 2500Vrms
Manufacturer: Toshiba
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0 - WHS 1

MOQ : 3000
Multiples : 3000
3000 : USD 0
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0 - WHS 2

MOQ : 3000
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3000 : USD 1.6373
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0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 7.329
10 : USD 4.3829
100 : USD 2.3566
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0 - WHS 5

MOQ : 3000
Multiples : 3000
3000 : USD 1.4073
24000 : USD 1.384
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MOQ : 5
Multiples : 1
5 : USD 3.4294
10 : USD 2.7612
25 : USD 2.5634
100 : USD 2.1598
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Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Maximum Forward Diode Voltage
Maximum Reverse Diode Voltage
Maximum Rise Time
Maximum Fall Time
Package / Case
Maximum Operating Temperature
Minimum Operating Temperature
Series
Packaging
Output Type
Isolation Voltage
If - Forward Current
Vf - Forward Voltage
Vr - Reverse Voltage
Input Type
Output Device
Brand
Forward Current
Number Of Channels Per Chip
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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Additional Infomation About Product

TLP191B TOSHIBA Photocoupler IRED & Photo-Diode Array TLP191B Unit: mm Telecommunication Programmable Controllers MOS Gate Driver MOS FET Gate Driver The TOSHIBA mini-flat coupler TLP191B is a small outline coupler, suitable for surface mount assembly. The TLP191B consists of an infrared emitting diode, optically coupled to a series connected photo diode array with shunt resistor which is suitable for MOS FET gate drive. TLP191B : Mini Flat Package, 4Pin, one circuit Open voltage: 7.0 V (min) Short current: 24 A (min) Isolation voltage: 2500 Vrms (min) UL-recognized: UL 1577, File No.E67349 TOSHIBA 11-4C1 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 Weight: 0.09 g (typ.) Pin Configuration (top view) 6 1 3 4 1 . Anode 3 . Cathode 4 . Cathode 6 . Anode Start of commercial production 1990-11 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP191B Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Forward current I 50 mA F Forward current derating (Ta 25C ) I /C -0.5 mA/C F Pulse forward current I 1 A FP (100 s pulse, 100 pps) LED Reverse voltage V 3 V R P 100 mW Diode power dissipation D P /C -1.0 mW/C Diode power dissipation derating (Ta >25C) D Junction temperature T 125 C j Forward current I 50 A FD Reverse voltage V 10 V RD Detector Output power dissipation P 0.5 mW O Junction temperature T 125 C j Storage temperature range T -55 to 125 C stg Operating temperature range T -40 to 85 C opr Lead soldering temperature (10 s) T 260 C sol Isolation voltage BV 2500 Vrms S (AC, 60 s, R.H. 60 %) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). Note 1: Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4 and 6 shorted together. 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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