Product Information

TLP291(GB-TP.E(O

TLP291(GB-TP.E(O electronic component of Toshiba

Datasheet
Transistor Output Optocouplers

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.0936 ea
Line Total: USD 234

0 - Global Stock
MOQ: 2500  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 2500
Multiples : 1
2500 : USD 0.0936

0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 2500
Multiples : 2500
2500 : USD 0.1669

     
Manufacturer
Product Category
Package / Case
Number of Channels
Mounting Style
Kind Of Output
Type Of Semiconductor Component
Turn-On Time
Turn-Off Time
Insulation Voltage
Ctr If
Collector-Emitter Voltage
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TLP291 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP291 Power Supplies Unit: mm Programmable Controllers Hybrid ICs TLP291 consists of photo transistor, optically coupled to a gallium arsenide infrared emitting diode. TLP291 is housed in the SO4 package, very small and thin coupler. Since TLP291 is guaranteed wide operating temperature (Ta=-55 to 110 C) and high isolation voltage (3750Vrms), its suitable for high-density surface mounting applications such as small switching power supplies and programmable controllers. Collector-Emitter Voltage : 80 V (min) Current Transfer Ratio : 50% (min) Rank GB : 100% (min) TOSHIBA 11-3C1 Isolation Voltage : 3750 Vrms (min) Weight: 0.05 g (typ.) Operation temperature : -55 to 110 C UL recognized : UL1577, File No. E67349 cUL approved : CSA Component Acceptance Service No.5A, Pin Configuration File No. 67349 SEMKO approved: EN 60065: 2002, Approved no. 1200315 TLP291 EN 60950-1: 2001, EN 60335-1: 2002, 1 4 Approved no. 1200315 BSI approved : BS EN 60065: 2002, Approved no. 9036 2 3 : BS EN 60950-1: 2006, Approved no. 9037 Option (V4) VDE approved: EN 60747-5-5 Certificate, No. 40009347 1:ANODE Maximum operating insulation voltage: 707 Vpk 2:CATHODE Highest permissible over-voltage: 6000 Vpk 3:EMITTER (Note) When EN 60747-5-5 approved type is needed, 4:COLLECTOR please designate the Option(V4) Construction Mechanical Rating Creepage distance: 5.0 mm (min) Clearance: 5.0 mm (min) Insulation thickness: 0.4 mm (min) Start of commercial production 2012/02 1 2014-09-22 TLP291 Current Transfer Ratio (CTR) Rank ( Unless otherwise specified, Ta = 25C) Current Transfer Ratio (%) (I / I ) C F Classification TYPE Marking of Classification I = 5 mA, V = 5 V, Ta = 25C (Note1) F CE Min Max Blank 50 400 Blank, YE, Y+, GR, GB, G, G+,B Rank Y 50 150 YE Rank GR 100 300 GR Rank GB 100 400 GB TLP291 Rank YH 75 150 Y+ Rank GRL 100 200 G Rank GRH 150 300 G+ Rank BLL 200 400 B Note1: Specify both the part number and a rank in this format when ordering (e.g.) rank GB: TLP291 (GB,E For safety standard certification, however, specify the part number alone. (e.g.)TLP291 (GB,E: TLP291 2 2014-09-22

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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