Product Information

TLP3114(TP,F)

TLP3114(TP,F) electronic component of Toshiba

Datasheet
MOSFET Output Optocouplers Photorelay Voff=40V Ion=0.25A Ron=2Ohm

Manufacturer: Toshiba
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Price (USD)
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Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 6.9664
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Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 6.9664
N/A

Obsolete
0 - Global Stock

MOQ : 2500
Multiples : 2500
2500 : USD 3.5231
N/A

Obsolete
0 - Global Stock

MOQ : 2500
Multiples : 2500
2500 : USD 3.3156
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Output Device
Isolation Voltage
Forward Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Package / Case
Brand
Maximum Fall Time
Maximum Forward Diode Voltage
Maximum Reverse Diode Voltage
Maximum Rise Time
Number Of Channels Per Chip
Factory Pack Quantity :
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TLP3114 TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP3114 MEASUREMENT INSTRUMENTS LOGIC IC TESTERS / MEMORY TESTERS Unit: mm BOARD TESTERS / SCANNERS The TOSHIBA TLP3114 Mini-flat photorelay is a small-outline photorelay, suitable for surface-mount assembly. The TLP3114 consists of an infrared- emitting diode optically coupled to a photo-MOS FET and housed in a 4- pin package. Its characteristics include low OFF-state current and low output pin capacitance, enabling it to be used in high-frequency measuring instruments. Features 4 pin SOP (2.54SOP4) : 2.1 mm high, 2.54 mm pitch 1-Form-A Peak Off-State Voltage : 40 V (min) Trigger LED Current : 4 mA (max) JEDEC On-State Current : 250 mA (max) JEITA On-State Resistance : 3 (max), 2 (typ.) TOSHIBA 11 5H1 Output Capacitance : 7 pF (max), 5 pF (typ.) Weight: 0.1 g (typ.) Isolation Voltage : 1500 Vrms (min) UL-recognized : UL 1577, File No.E67349 cUL-recognized :CSA Component Acceptance Service No.5A File No.E67349 VDE-approved :EN 60747-5-5 (Note 1) Note 1: When a VDE approved type is needed, please designate the Option(V4). Pin Configuration (top view) Schematic 1 4 1 4 2 3 2 3 1 : ANODE 2 : CATHODE 3 : DRAIN 4 : DRAIN Start of commercial production 2001-03 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP3114 Absolute Maximum Ratings (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT Forward Current I 50 mA F Forward Current Derating (Ta 25C) I /C 0.5 mA/C F Reverse Voltage V 5 V R Diode Power Dissipation P 50 mW D P /C -0.5 mW/C Diode Power Dissipation Derating (Ta 25C) D Junction Temperature T 125 C j Off-State Output Terminal Voltage V 40 V OFF On-State Current I 250 mA ON On-State Current Derating (Ta 25C) I /C 2.5 mA/C ON Output Power Dissipation P 188 mW O Output Power Dissipation Derating (Ta 25C) P / C 1.88 mW / C O Junction Temperature T 125 C j Storage Temperature Range T 40 to 125 C stg Operating Temperature Range T 20 to 85 C opr Lead Soldering Temperature (10 s) T 260 C sol Isolation Voltage (AC, 60 s, R.H. 60 %) (Note 1) BV 1500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). (Note 1): Device considered a two-terminal device : Pins 1 and 2 shorted together, and pins 3 and 4 shorted together. CAUTION This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and equipment are earthed. Recommended Operating Conditions CHARACTERISTIC SYMBOL MIN TYP. MAX UNIT Supply Voltage V 32 V DD Forward Current IF 10 30 mA On-State Current I 250 mA ON Operating Temperature T 25 60 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Forward Voltage V I = 10 mA 1.0 1.15 1.3 V F F Reverse Current I V = 5 V 10 A R R Capacitance between terminals C V = 0 V, f = 1 MHz 15 pF T F Off-State Current I V = 30 V, Ta = 50 C 1000 pA OFF OFF Capacitance between terminals COFF V = 0 V, f = 100 MHz, t < 1 s 5 7 pF 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation DETECTOR LED DETECTOR LED

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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