Product Information

TLP291(GRL-TP,SE(T

TLP291(GRL-TP,SE(T electronic component of Toshiba

Datasheet
Optocouplers SO-4 RoHS

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

226: USD 0.1698 ea
Line Total: USD 38.37

7236 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 226  Multiples: 1
Pack Size: 1
Availability Price Quantity
9700 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 236
Multiples : 1
236 : USD 0.4029
250 : USD 0.3909
500 : USD 0.3804
1000 : USD 0.3711
2500 : USD 0.3638

7236 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 226
Multiples : 1
226 : USD 0.1698
500 : USD 0.1501
1000 : USD 0.1436
2000 : USD 0.1353
2500 : USD 0.1336

     
Manufacturer
Product Category
Rohs
Package
Brand Category
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TLP291(SE TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP291(SE Power Supplies Unit: mm Programmable Controllers Hybrid ICs TLP291(SE consists of photo transistor optically coupled to a gallium arsenide infrared emitting diode. TLP291(SE is housed in the SO4 package, very small and thin coupler. Since TLP291(SE is guaranteed wide operating temperature (Ta=-55 to 110 C) and high isolation voltage (3750Vrms), its suitable for high-density surface mounting applications such as small switching power supplies and programmable controllers. Collector-Emitter Voltage : 80 V (min) Current Transfer Ratio : 50% (min) TOSHIBA 11-3C1 Rank GB : 100% (min) Weight: 0.05 g (typ.) Isolation Voltage : 3750 Vrms (min) Operation temperature: -55 to 110 C Pin Configuration UL recognized : UL1577, File No. E67349 cUL approved : CSA Component Acceptance Service No.5A, File No. E67349 SEMKO conformity : EN 60065: 2002, TLP291 EN 60950-1: 2001, EN 60335-1: 2002, 1 4 BSI conformity : BS EN 60065: 2002, BS EN 60950-1: 2006 2 3 VDE conformity: EN 60747-5-5 1:ANODE 2:CATHODE 3:EMITTER Construction Mechanical Rating 4:COLLECTOR Creepage distance: 5.0mm(min) Clearance: 5.0mm(min) Insulation thickness: 0.4mm(min) 1 2013-05-27 TLP291(SE Current Transfer Ratio (CTR) Rank ( Unless otherwise specified, Ta = 25C) Current Transfer Ratio (%) (I / I ) C F Classification TYPE Marking of Classification I = 5 mA, V = 5 V, Ta = 25C (Note1) F CE Min Max Blank 50 600 Blank, YE, GR, GB, BL, Y+, G, G+,B Rank Y 50 150 YE Rank GR 100 300 GR Rank GB 100 600 GB TLP291 Rank BL 200 600 BL Rank YH 75 150 Y+ Rank GRL 100 200 G Rank GRH 150 300 G+ Rank BLL 200 400 B Note1: Specify both the part number and a rank in this format when ordering (e.g.) rank GB: TLP291 (GB,SE For safety standard certification, however, specify the part number alone. (e.g.)TLP291 (GB,SE: TLP291 2 2013-05-27

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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