Product Information

SSM3K345R,LF

Name: SSM3K345R,LF
Brand: Toshiba
SKU: SSM3K345RLF_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

SSM3K345R,LF electronic component of Toshiba

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See Product Specifications
Datasheet

MOSFET LowON Res MOSFET ID=4A VDSS=20V

Manufacturer: Toshiba

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

3000: USD 0.0841 ea
Line Total: USD 252.3

0 - Global Stock

MOQ: 3000 Multiples: 3000
Pack Size: 3000

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Thu. 09 May to Wed. 15 May MOQ : 3000 Multiples : 3000 SSM3K345R,LF Toshiba	3000 : USD 0.0868

0 - WHS 2 Ships to you between Thu. 16 May to Tue. 21 May MOQ : 1 Multiples : 1 SSM3K345R,LF Toshiba	1 : USD 0.25 10 : USD 0.2037 30 : USD 0.1837 100 : USD 0.1589 500 : USD 0.1479 1000 : USD 0.1412

0 - WHS 3 Ships to you between Wed. 15 May to Fri. 17 May MOQ : 1 Multiples : 1 SSM3K345R,LF Toshiba	1 : USD 1.188 10 : USD 0.9072 100 : USD 0.2257 500 : USD 0.1544 1000 : USD 0.1188 3000 : USD 0.1004

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Additional Infomation About Product

The SSM3K345RLF is a MOSFET LowON Res MOSFET manufactured by Toshiba. It has a maximum current rating of 4A and a maximum applied drain source voltage of 20V. It is used for a variety of purposes, including general-purpose analog and digital switching and power-switching applications. It is optimized for low on resistance and low gate charge to minimize the power losses and improve switching performance.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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Manufacturer Toshiba Toshiba
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 4 A 4 A
Vds - Drain-Source Breakdown Voltage 20 V 20 V
Rds On - Drain-Source Resistance 25 mOhms 25 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 400 mV 400 mV
Minimum Operating Temperature - -
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 2 W 2 W
Mounting Style Smd/Smt Smd/Smt
Package / Case SOT - 23F - 3 SOT - 23F - 3
Packaging Cut Tape Cut Tape
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 8 V 8 V
Qg - Gate Charge 3.6 nC 3.6 nC
Channel Mode Enhancement Enhancement
Configuration Single Single
Transistor Type 1 N - Channel 1 N - Channel
Brand Toshiba Toshiba
Product Type Mosfet Mosfet
Factory Pack Quantity : 3000 3000
Subcategory Mosfets Mosfets
Typical Turn-Off Delay Time 45 ns 45 ns
Typical Turn-On Delay Time 25 ns 25 ns
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999