Product Information

SSM3K35CT,L3F(T

Name: SSM3K35CT,L3F(T
Brand: Toshiba
SKU: SSM3K35CTL3FT_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

SSM3K35CT,L3F(T electronic component of Toshiba

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Datasheet

MOSFET N Trench 20V 180mA 1V @ 1mA 3 Î© @ 50mA,4V CST3 RoHS

Manufacturer: Toshiba

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.1107 ea
Line Total: USD 1.11

0 - Global Stock

MOQ: 10 Multiples: 10
Pack Size: 10

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Thu. 16 May to Tue. 21 May MOQ : 10 Multiples : 10 SSM3K35CT,L3F(T Toshiba	10 : USD 0.1107 100 : USD 0.0933 300 : USD 0.0805 1000 : USD 0.0701 5000 : USD 0.0683 10000 : USD 0.0673

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Additional Infomation About Product

The SSM3K35CT,L3F(T part is a MOSFET transistor made by Toshiba. It is designed for power switching and has a trench type design, with a 20 V drain-source voltage (VDS) and a maximum current of 180 mA. It also has a gate-source voltage range from 1V @ 1mA to 4V @ 50mA, and a drain-source on resistance of 3 O. The part is compliant with the Restriction of Hazardous Substances (RoHS) Directive.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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Manufacturer Toshiba Toshiba
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Package CST3 CST3
Brand Category Toshiba Toshiba
Fet Type n trench n trench
Drain To Source Voltagevdss 20 V 20 V
Continuous Drain Current Id @ 25°C 180 mA 180 mA
Vgsth Max @ Id 1v @ 1m A 1v @ 1m A
Rds On Max @ Id Vgs 3 @ 50ma,4v 3 @ 50ma,4v
Power Dissipation Max 100 mW 100 mW
Drain Source Voltage Vdss 20 V 20 V
Continuous Drain Current Id 180 mA 180 mA
Drain Source On Resistance Rdson@Vgs Id 3 Ohms @4V , 50mA 3 Ohms @4V , 50mA
Power Dissipation Pd 100 mW 100 mW
Gate Threshold Voltage Vgsth@Id 1 V @1 mA 1 V @1 mA
Type N Channel N Channel