Product Information

SSM3K7002BF,LF(T

Name: SSM3K7002BF,LF(T
Brand: Toshiba
SKU: SSM3K7002BFLFT_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

SSM3K7002BF,LF(T electronic component of Toshiba

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Datasheet

MOSFET N Trench 60V 200mA 3.1V @ 250uA 2.1 Î© @ 500mA,10V S-MINI RoHS

Manufacturer: Toshiba

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

20: USD 0.0462 ea
Line Total: USD 0.92

0 - Global Stock

MOQ: 20 Multiples: 20
Pack Size: 20

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - Warehouse 1 Ships to you between Mon. 13 May to Thu. 16 May MOQ : 20 Multiples : 20 SSM3K7002BF,LF(T Toshiba	20 : USD 0.0462 200 : USD 0.0389 600 : USD 0.0336 2000 : USD 0.0292 10000 : USD 0.0285 20000 : USD 0.0281

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Additional Infomation About Product

The SSM3K7002BF,LF(T with MOSFET N Trench 60V 200mA 3.1V @ 250uA 2.1 Î© @ 500mA,10V S-MINI RoHS manufactured by Toshiba is an electronic part used for power supply applications. It is a power field effect transistor (FET) with an N type trench structure, where the gate voltage is 3.1 volts at 250 microamps and the drain-source resistance is 2.1 ohms at 500 milliamps. The supply voltage is rated up to 60 volts and the continuous drain current is 200 milliamps. It is compliant with Restriction of Hazardous Substances (RoHS) safety standards and measures 10 volts using a mini package size.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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Manufacturer Toshiba Toshiba
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Package S - M in I S - M in I
Brand Category Toshiba Toshiba
Fet Type n trench n trench
Drain To Source Voltagevdss 60 V 60 V
Continuous Drain Current Id @ 25°C 200 mA 200 mA
Vgsth Max @ Id 3.1 V @ 250ua 3.1 V @ 250ua
Rds On Max @ Id Vgs 2.1 @ 500ma,10v 2.1 @ 500ma,10v
Power Dissipation Max 200 mW 200 mW
Drain Source Voltage Vdss 60 V 60 V
Continuous Drain Current Id 200 mA 200 mA
Power Dissipation Pd 200 mW 200 mW
Drain Source On Resistance Rdson@Vgs Id 2.1 Ohms @10V , 500mA 2.1 Ohms @10V , 500mA
Gate Threshold Voltage Vgsth@Id 3.1 V @250uA 3.1 V @250uA
Type N Channel N Channel