Product Information

TK90S06N1L,LQ

TK90S06N1L,LQ electronic component of Toshiba

Datasheet
MOSFET UMOSVIII 60V 3.3m max(VGS=10V) DPAK
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2000: USD 0.9676 ea
Line Total: USD 1935.2

0 - Global Stock
MOQ: 2000  Multiples: 2000
Pack Size: 2000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 2000
Multiples : 2000
2000 : USD 1.7688
4000 : USD 1.7512
6000 : USD 1.7337
8000 : USD 1.7163
10000 : USD 1.6992
12000 : USD 1.6822
20000 : USD 1.6653
30000 : USD 1.6487
50000 : USD 1.6322

0 - WHS 2


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 5.7431
10 : USD 2.0728
25 : USD 2.0301
100 : USD 1.6348
500 : USD 1.3463
1000 : USD 1.2074

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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Additional Infomation About Product

TK90S06N1L MOSFETs Silicon N-channel MOS (U-MOS-H) TK90S06N1LTK90S06N1LTK90S06N1LTK90S06N1L 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Automotive Switching Voltage Regulators Motor Drivers 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) AEC-Q101 qualified (2) Low drain-source on-resistance: R = 2.7 m (typ.) (V = 10 V) DS(ON) GS (3) Low leakage current: I = 10 A (max) (V = 60 V) DSS DS (4) Enhancement mode: V = 1.5 to 2.5 V (V = 10 V, I = 0.5 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ Start of commercial production 2014-05 2016-2020 2020-06-24 1 Toshiba Electronic Devices & Storage Corporation Rev.5.0TK90S06N1L 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 90 A D Drain current (pulsed) (Note 1) I 180 DP Power dissipation (T = 25) (Note 2) P 157 W c D Single-pulse avalanche energy (Note 3) E 95 mJ AS Single-pulse avalanche current I 90 A AS Turn-off dV /dt ruggedness dV /dt 2.3 V/ns DS DS Channel temperature (Note 4) T 175 ch Storage temperature (Note 4) T -55 to 175 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 0.95 /W th(ch-c) Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: The power dissipation value is calculated based on the channel-to-case thermal resistance. However, the safe operating area is not only limited to thermal limits but also the current concentration phenomenon. This device should not be used under conditions outside its safe operating area shown herein. Note 3: V = 48 V, T = 25 (initial), L = 9.1 H, R = 25 , I = 90 A DD ch G AS Note 4: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2016-2020 2020-06-24 2 Toshiba Electronic Devices & Storage Corporation Rev.5.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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