Product Information

DF10G7M1N,LF

DF10G7M1N,LF electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes ESD 0.3pF 0.5uA 6V VBR 1mA Diode

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

84: USD 0.1125 ea
Line Total: USD 9.45

0 - Global Stock
MOQ: 84  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 3000
Multiples : 1

Stock Image

DF10G7M1N,LF
Toshiba

3000 : USD 0.1089
6000 : USD 0.097
9000 : USD 0.0888

0 - Warehouse 2


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 3000
Multiples : 3000

Stock Image

DF10G7M1N,LF
Toshiba

3000 : USD 0.0989
9000 : USD 0.0897
24000 : USD 0.0897
45000 : USD 0.0862

0 - Warehouse 3


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 84
Multiples : 1

Stock Image

DF10G7M1N,LF
Toshiba

84 : USD 0.1125
100 : USD 0.1
500 : USD 0.0953
1000 : USD 0.0857
3000 : USD 0.0825
6000 : USD 0.0809

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Number of Channels
Termination Style
Breakdown Voltage
Clamping Voltage
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Capacitance
Brand
Channels
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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DF10G7M1N ESD Protection Diodes Silicon Epitaxial Planar DF10G7M1NDF10G7M1NDF10G7M1NDF10G7M1N 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications ESD Protection for: USB 2.0 USB 3.0 HDMI SATA/eSATA DisplayPort Interface Digital Visual Interface (DVI) MDDI PCI Express Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. 2. Packaging and Internal CircuitPackaging and Internal Circuit 2. 2. Packaging and Internal CircuitPackaging and Internal Circuit 1 : I/O 1 2 : I/O 2 3 : GND 4 : I/O 3 5 : I/O 4 6 : NC 7 : NC 8 : NC 9 : NC 10 : NC DFN10 Start of commercial production 2012-11 2014-04-14 1 Rev.5.0DF10G7M1N 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25)) 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25)) aa aa Characteristics Symbol Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) V 8 kV ESD Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2014-04-14 2 Rev.5.0

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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