DF2B20M4SL,L3F

DF2B20M4SL ESD Protection Diodes Silicon Epitaxial Planar DF2B20M4SLDF2B20M4SLDF2B20M4SLDF2B20M4SL 1. 1. GeneralGeneral 1. 1. GeneralGeneral The DF2B20M4SL is a bidirectional TVS diode with high V (18.5V) designed to protect high speed line or differential signal line RWM from the damage caused by ESD and other transients voltage. This TVS diode can protect the latter part well by the low dynamic resistance, improve the system reliability level by the high V performance. It is optimum for antennal application such as NFC ESD for the low capacitance performance. And the small package size (0.62 mm 0.32 mm) is ideal for high-density mounting. 2. 2. 2. 2. ApplicationsApplicationsApplicationsApplications Mobile Equipment Smartphones Tablets Notebook PCs Desktop PCs Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 3. 3. 3. 3. FeaturesFeaturesFeaturesFeatures (1) Suitable for high working voltage line. (V 18.5 V) RWM (2) Protects devices with its high ESD performance. (V = 15 kV (Contact / Air) IEC61000-4-2) ESD (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (R = 0.2 (typ.)) DYN (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices. (V = 26 V I = 0.5 A (typ.)) C PP (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (0.62 mm 0.32 mm size (Toshiba package name: SL2)) 4. 4. 4. 4. Example of Circuit DiagramExample of Circuit DiagramExample of Circuit DiagramExample of Circuit Diagram Start of commercial production 2016-09 2016-2018 2018-01-10 1 Toshiba Electronic Devices & Storage Corporation Rev.4.0DF2B20M4SL 5. 5. 5. 5. Quick Reference DataQuick Reference DataQuick Reference DataQuick Reference Data Characteristics Symbol Note Test Condition Min Typ. Max Unit Working peak reverse voltage V (Note 1) 18.5 V RWM Total capacitance C V = 0 V, f = 1 MHz 0.2 0.5 pF t R Dynamic resistance R (Note 2) 0.2 DYN Electrostatic discharge voltage V (Note 3) 15 kV ESD (IEC61000-4-2) (Contact) Note 1: Recommended operating condition. Note 2: TLP parameters: Z0 = 50 , tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between I = 8 A and I = 16 A. PP1 PP2 Note 3: Criterion: No damage to devices. 5.1. 5.1. 5.1. 5.1. ESD Clamp Waveform (Note)ESD Clamp Waveform (Note)ESD Clamp Waveform (Note)ESD Clamp Waveform (Note) Fig. Fig. Fig. Fig. 5.1.15.1.15.1.15.1.1 +8 kV+8 kV+8 kV+8 kV Fig. Fig. Fig. Fig. 5.1.25.1.25.1.25.1.2 -8 kV-8 kV-8 kV-8 kV Fig. Fig. Fig. Fig. 5.1.35.1.35.1.35.1.3 IEC61000-4-2 (Contact)IEC61000-4-2 (Contact)IEC61000-4-2 (Contact)IEC61000-4-2 (Contact) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 2016-2018 2018-01-10 2 Toshiba Electronic Devices & Storage Corporation Rev.4.0