Product Information

DF2B5SL,L3F

DF2B5SL,L3F electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes ESD protection diode 5.5A +/-17kV
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0912 ea
Line Total: USD 0.09

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 10000
Multiples : 10000

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DF2B5SL,L3F
Toshiba

10000 : USD 0.1949
20000 : USD 0.1937
30000 : USD 0.1925
40000 : USD 0.1914
50000 : USD 0.1902
60000 : USD 0.189
100000 : USD 0.1878
150000 : USD 0.1866
200000 : USD 0.1853

0 - WHS 2


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1

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DF2B5SL,L3F
Toshiba

1 : USD 0.5736
10 : USD 0.4241
100 : USD 0.0852
1000 : USD 0.0424
2500 : USD 0.0358
10000 : USD 0.0338
20000 : USD 0.0304
50000 : USD 0.0294
100000 : USD 0.0272

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Number of Channels
Termination Style
Breakdown Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
LoadingGif

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Additional Infomation About Product

DF2B5SL ESD Protection Diodes Silicon Epitaxial Planar DF2B5SLDF2B5SLDF2B5SLDF2B5SL 1. 1. GeneralGeneral 1. 1. GeneralGeneral The DF2B5SL is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. Utilizing snapback characteristics, the DF2B5SL provides low dynamic resistance and superior protective performance. Furthermore, the DF2B5SL is housed in an ultra-compact package (0.62 mm 0.32 mm) to meet applications that require a small footprint. 2. 2. 2. 2. ApplicationsApplicationsApplicationsApplications Mobile Equipment Smartphones Tablets Notebook PCs Desktop PCs Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Suitable for use with a 3.3 V signal line. (V 3.3 V) RWM (2) Protects devices with its high ESD performance. (V = 17 kV (Contact / Air) IEC61000-4-2) ESD (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (R = 0.25 (typ.)) DYN (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices. (V = 9.5 V I = 5.5 A (typ.)) C PP (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (0.62 mm 0.32 mm size (Nickname: SL2)) 4. 4. 4. 4. PackagingPackagingPackagingPackaging SL2 Start of commercial production 2018-06 2018 2018-06-27 1 Toshiba Electronic Devices & Storage Corporation Rev.1.0DF2B5SL 5. 5. 5. 5. Example of Circuit DiagramExample of Circuit DiagramExample of Circuit DiagramExample of Circuit Diagram 6. 6. 6. 6. Quick Reference DataQuick Reference DataQuick Reference DataQuick Reference Data Characteristics Symbol Note Test Condition Min Typ. Max Unit Working peak reverse voltage V (Note 1) 3.3 V RWM Total capacitance C V = 0 V, f = 1 MHz 7.2 9 pF t R Dynamic resistance R (Note 2) 0.25 DYN Electrostatic discharge voltage V (Note 3) 17 kV ESD (IEC61000-4-2) (Contact) Note 1: Recommended operating condition. Note 2: TLP parameters: Z0 = 50 , tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between I = 8 A and I = 16 A. PP1 PP2 Note 3: Criterion: No damage to devices. 6.1. 6.1. 6.1. 6.1. ESD Clamp Waveform (Note)ESD Clamp Waveform (Note)ESD Clamp Waveform (Note)ESD Clamp Waveform (Note) Fig. Fig. Fig. Fig. 6.1.16.1.16.1.16.1.1 +8 kV+8 kV+8 kV+8 kV Fig. Fig. Fig. Fig. 6.1.26.1.26.1.26.1.2 -8 kV-8 kV-8 kV-8 kV Fig. Fig. Fig. Fig. 6.1.36.1.36.1.36.1.3 IEC61000-4-2 (Contact)IEC61000-4-2 (Contact)IEC61000-4-2 (Contact)IEC61000-4-2 (Contact) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 2018 2018-06-27 2 Toshiba Electronic Devices & Storage Corporation Rev.1.0

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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