Product Information

DF2B6M4CT,L3F

DF2B6M4CT,L3F electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes ESD protection diode .3pF 6.2V
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3827 ea
Line Total: USD 0.38

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1
1 : USD 0.1085
10 : USD 0.1075
25 : USD 0.0644
100 : USD 0.0631
250 : USD 0.0631
500 : USD 0.0631

0 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1
1 : USD 0.1096
10 : USD 0.1085
25 : USD 0.103
100 : USD 0.0699
250 : USD 0.0685
500 : USD 0.0685
1000 : USD 0.0685

0 - WHS 3


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 0.326
10 : USD 0.2669
100 : USD 0.099
1000 : USD 0.0616
2500 : USD 0.0543
10000 : USD 0.0459
20000 : USD 0.0435
50000 : USD 0.0423
100000 : USD 0.0411

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif

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Additional Infomation About Product

DF2B6M4CT ESD Protection Diodes Silicon Epitaxial Planar DF2B6M4CTDF2B6M4CTDF2B6M4CTDF2B6M4CT 1. 1. GeneralGeneral 1. 1. GeneralGeneral The DF2B6M4CT is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. Utilizing snapback characteristics, the DF2B6M4CT provides low dynamic resistance and superior protective performance. Furthermore, it is optimum the high speed signal application for the low capacitance performance. The DF2B6M4CT is housed in an ultra-compact package (1.0 0.6 mm) to meet applications that require a small footprint. 2. 2. 2. 2. ApplicationsApplicationsApplicationsApplications Mobile Equipment Smartphones Tablets Notebook PCs Desktop PCs Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Suitable for use with a 5.0 V signal line. (V 5.5 V) RWM (2) Protects devices with its high ESD performance. (V = 20 kV (Contact / Air) IEC61000-4-2) ESD (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (R = 0.5 (typ.)) DYN (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices. (V = 10 V I = 2 A (typ.)) C PP (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (1.0 0.6 mm size (Toshiba package name: CST2)) 4. 4. 4. 4. PackagingPackagingPackagingPackaging CST2 Start of commercial production 2016-12 2016-2017 2017-12-18 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0DF2B6M4CT 5. 5. 5. 5. Example of Circuit DiagramExample of Circuit DiagramExample of Circuit DiagramExample of Circuit Diagram 6. 6. 6. 6. Quick Reference DataQuick Reference DataQuick Reference DataQuick Reference Data Characteristics Symbol Note Test Condition Min Typ. Max Unit Working peak reverse voltage V (Note 1) 5.5 V RWM Total capacitance C V = 0 V, f = 1 MHz 0.2 0.3 pF t R Dynamic resistance R (Note 2) 0.5 DYN Electrostatic discharge voltage V (Note 3) 20 kV ESD (IEC61000-4-2) (Contact) Note 1: Recommended operating condition. Note 2: TLP parameters: Z0 = 50 , tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between I = 8 A and I = 16 A. PP1 PP2 Note 3: Criterion: No damage to devices. 2016-2017 2017-12-18 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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